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INA233

High-SideorLow-SideMeasurement,BidirectionalCurrentandPowerMonitorWithI2C-,SMBus-,andPMBus-CompatibleInterface

TI1Texas Instruments

德州儀器美國(guó)德州儀器公司

INA233AIDGSR

High-SideorLow-SideMeasurement,BidirectionalCurrentandPowerMonitorWithI2C-,SMBus-,andPMBus-CompatibleInterface

TI1Texas Instruments

德州儀器美國(guó)德州儀器公司

INA233AIDGST

High-SideorLow-SideMeasurement,BidirectionalCurrentandPowerMonitorWithI2C-,SMBus-,andPMBus-CompatibleInterface

TI1Texas Instruments

德州儀器美國(guó)德州儀器公司

IRF233

N-CHANNELPOWERMOSFETS

FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fsatswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability ?TO-3package(Standard)

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF233

N-ChannelPowerMOSFETs,12A,150-200V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VQSRatedat±20V

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF233

8.0Aand9.0A,150Vand200V,0.4and0.6Ohm,N-ChannelPowerMOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

Intersil

Intersil Corporation

IRF233

N-ChannelPowerMOSFETs,12A,150-200V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VQSRatedat±20V ●

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF233

HighPower,HighSpeedApplications

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF233

N-ChannelPowerMOSFETs,12A,150-200V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VQSRatedat±20V ●

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF233

N-ChannelPowerMosfets

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

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HM華之美
23+
SOT23-3L
50000
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Hmsemi
SOT-23
22+
6000
十年配單,只做原裝
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H&M
23+
SOT23-3L
10000
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Hmsemi
23+
SOT-23
6000
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HM華之美
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3000
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HMSEMI
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SOT-23
6800
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23+
SOT-23
6800
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HM華之美
24+
SOT23-3L
60000
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2025+
SOT23-3L
986966
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2511
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360000
電子元器件采購(gòu)降本 30%!盈慧通原廠(chǎng)直采,砍掉中間差價(jià)
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更多HM233LD供應(yīng)商 更新時(shí)間2025-7-27 11:00:00