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INA310X

INA310x–4Vto110V,1.3MHz,Ultra-PreciseCurrentSenseAmplifierWithOpen-DrainComparatorandReference

1Features ?Widecommon-modevoltage: –Operationalvoltage:?4Vto+110V –Survivalvoltage:?20Vto+120V ?Highsignalbandwidth:1.3MHz ?Slewrate:2.5V/μs ?ExcellentCMRR:160dB ?Accuracy –Gainerror(maximum) ?VersionA:0.15%,10ppm/°Cdrift ?VersionB:0.5%

TITexas Instruments

德州儀器美國德州儀器公司

INA310X

INA310x–4Vto110V,1.3MHz,Ultra-PreciseCurrentSenseAmplifierWithOpen-DrainComparatorandReference

1Features ?Widecommon-modevoltage: –Operationalvoltage:?4Vto+110V –Survivalvoltage:?20Vto+120V ?Highsignalbandwidth:1.3MHz ?Slewrate:2.5V/μs ?ExcellentCMRR:160dB ?Accuracy –Gainerror(maximum) ?VersionA:0.15%,10ppm/°Cdrift ?VersionB:0.5%

TITexas Instruments

德州儀器美國德州儀器公司

IRFD310

0.4A,400V,3.600Ohm,N-ChannelPowerMOSFET

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

Intersil

Intersil Corporation

IRFD310

PowerMOSFET

VDS(V)400 RDS(on)(Ω)VGS=10V3.6 Qg(Max.)(nC)17 Qgs(nC)3.4 Qgd(nC)8.5 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD310

PowerMOSFET(Vdss=400V,Rds(on)=3.6ohm,Id=0.35A)

VDSS=400V RDS(on)=3.6? ID=0.35A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.The4-pinDIPpackageisalow-costmachine-insertableca

IRF

International Rectifier

IRFD310

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Forautomaticinsertion ?Endstackable ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgene

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD310PBF

HEXFET?PowerMOSFET

VDSS=400V RDS(on)=3.6? ID=0.35A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.The4-pinDIPpackageisalow-costmachine-insertableca

IRF

International Rectifier

IRFD310PBF

PowerMOSFET

VDS(V)400 RDS(on)(Ω)VGS=10V3.6 Qg(Max.)(nC)17 Qgs(nC)3.4 Qgd(nC)8.5 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFE310

HEXFETTRANSISTOR

400Volt,3.6?,HEXFET Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.TheLCCprovidesdesignerstheextraflexibilitytheyneedtoincreasecircuitboarddensity.InternationalRectifierhasengineeredtheLCCpacka

IRF

International Rectifier

IRFE310

SimpleDriveRequirements

IRF

International Rectifier

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24+
N/A
62000
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HONGLITRONIC(鴻利光電)
2447
3.45x3.45x1.9mm
115000
1000個(gè)/圓盤一級(jí)代理專營品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,
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HONGLITRONIC(鴻利光電)
2021+
3.45x3.45x1.9mm
766
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Panduit Corp
2010+
N/A
500
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RS PRO
22+
1500
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HOSHIDEN96
23+
10000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
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HOSIDEN
25+
LCD
880000
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Essentra
22+
NA
1000
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ESSENTRACOMPONENTSAMERIC
21+
12588
連接器
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N/A
1950+
DIP40
6852
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更多HLC310供應(yīng)商 更新時(shí)間2025-7-27 11:06:00