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IPM-L123

MiniatureIntegratedPowerMonitor

JDSUJDS Uniphase Corporation

捷迪訊

IRF123

8.0Aand9.2A,80Vand100V,0.27and0.36Ohm,N-Channel,PowerMOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

Intersil

Intersil Corporation

IRF123

N-ChannelPowerMOSFETs,11A,60-100V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ?LowRDs

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRF123

N-CHANNELPOWERMOSFETS

FEATURES ?LowRDs

SamsungSamsung semiconductor

三星三星半導體

IRF123

NanosecondSwitchingSpeeds

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF123

IRF120-123/IRF520-523MTP10N08/10N10N-ChannelPowerMOSFETs

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ?LowRDs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

IRF123

N-ChannelPowerMOSFETs,11A,60-100V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ?LowRDs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

IRF123

N-ChannelPowerMOSFETs,11A,60-100V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ?LowRDs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

IRF123

N-ChannelPowerMosfets,

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

IRFD123

1.3Aand1.1A,80Vand100V,0.30and0.40Ohm,N-ChannelPowerMOSFETs

Description TheseareadvancedpowerMOSFETisdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregul

HARRIS

Harris Corporation

詳細參數(shù)

  • 型號:

    HLB123T

  • 制造商:

    HSMC

  • 制造商全稱:

    HSMC

  • 功能描述:

    NPN EPITAXIAL PLANAR TRANSISTOR

供應商型號品牌批號封裝庫存備注價格
HIS
23+
10000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
詢價
HIS
25+
NA
880000
明嘉萊只做原裝正品現(xiàn)貨
詢價
UTC
2023+環(huán)?,F(xiàn)貨
TO220
50000
專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務
詢價
ST/意法
23+
TO-223
69820
終端可以免費供樣,支持BOM配單!
詢價
HSMC
22+
TO-220
20000
保證原裝正品,假一陪十
詢價
HSMC
2022
TO220
3080
原裝正品
詢價
HUAJING
TO-220
22+
6000
十年配單,只做原裝
詢價
HUAJING
23+
TO-220
6000
原裝正品,支持實單
詢價
HSMC
22+
TO-220
100000
代理渠道/只做原裝/可含稅
詢價
HSMC
23+
TO-220
5000
專注配單,只做原裝進口現(xiàn)貨
詢價
更多HLB123T供應商 更新時間2025-7-16 15:07:00