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首頁(yè)>HIP2101IR4Z>規(guī)格書(shū)詳情

HIP2101IR4Z集成電路(IC)的柵極驅(qū)動(dòng)器規(guī)格書(shū)PDF中文資料

HIP2101IR4Z
廠商型號(hào)

HIP2101IR4Z

參數(shù)屬性

HIP2101IR4Z 封裝/外殼為12-VFDFN 裸露焊盤(pán);包裝為卷帶(TR);類別為集成電路(IC)的柵極驅(qū)動(dòng)器;產(chǎn)品描述:IC GATE DRVR HALF-BRIDGE 12DFN

功能描述

100V/2A Peak, Low Cost, High Frequency Half Bridge Driver

封裝外殼

12-VFDFN 裸露焊盤(pán)

文件大小

410.39 Kbytes

頁(yè)面數(shù)量

12 頁(yè)

生產(chǎn)廠商

INTERSIL

網(wǎng)址

網(wǎng)址

數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-8-24 23:01:00

人工找貨

HIP2101IR4Z價(jià)格和庫(kù)存,歡迎聯(lián)系客服免費(fèi)人工找貨

HIP2101IR4Z規(guī)格書(shū)詳情

The HIP2101 is a high frequency, 100V Half Bridge

N-Channel power MOSFET driver IC. It is equivalent to the

HIP2100 with the added advantage of full TTL/CMOS

compatible logic input pins. The low-side and high-side gate

drivers are independently controlled and matched to 13ns.

This gives users total control over dead-time for specific

power circuit topologies. Undervoltage protection on both

the low-side and high-side supplies force the outputs low. An

on-chip diode eliminates the discrete diode required with

other driver ICs. A new level-shifter topology yields the lowpower benefits of pulsed operation with the safety of DC

operation. Unlike some competitors, the high-side output

returns to its correct state after a momentary undervoltage of

the high-side supply.

特性 Features

? Drives N-Channel MOSFET Half Bridge

? SOIC, EPSOIC, QFN and DFN Package Options

? SOIC, EPSOIC and DFN Packages Compliant with 100V

Conductor Spacing Guidelines of IPC-2221

? Pb-free Product Available (RoHS Compliant)

? Bootstrap Supply Max Voltage to 114VDC

? On-Chip 1? Bootstrap Diode

? Fast Propagation Times for Multi-MHz Circuits

? Drives 1000pF Load with Rise and Fall Times Typ. 10ns

? TTL/CMOS Input Thresholds Increase Flexibility

? Independent Inputs for Non-Half Bridge Topologies

? No Start-Up Problems

? Outputs Unaffected by Supply Glitches, HS Ringing Below

Ground, or HS Slewing at High dv/dt

? Low Power Consumption

? Wide Supply Range

? Supply Undervoltage Protection

? 3? Output Driver Resistance

? QFN/DFN Package:

- Compliant to JEDEC PUB95 MO-220

QFN - Quad Flat No Leads - Package Outline

- Near Chip Scale Package footprint, which improves

PCB efficiency and has a thinner profile

Applications

? Telecom Half Bridge Power Supplies

? Avionics DC-DC Converters

? Two-Switch Forward Converters

? Active Clamp Forward Converters

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    HIP2101IR4Z

  • 制造商:

    Renesas Electronics America Inc

  • 類別:

    集成電路(IC) > 柵極驅(qū)動(dòng)器

  • 包裝:

    卷帶(TR)

  • 驅(qū)動(dòng)配置:

    半橋

  • 通道類型:

    獨(dú)立式

  • 柵極類型:

    N 溝道 MOSFET

  • 電壓 - 供電:

    9V ~ 14V

  • 邏輯電壓?- VIL,VIH:

    0.8V,2.2V

  • 電流 - 峰值輸出(灌入,拉出):

    2A,2A

  • 輸入類型:

    非反相

  • 上升/下降時(shí)間(典型值):

    10ns,10ns

  • 工作溫度:

    -55°C ~ 150°C(TJ)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    12-VFDFN 裸露焊盤(pán)

  • 供應(yīng)商器件封裝:

    12-DFN(4x4)

  • 描述:

    IC GATE DRVR HALF-BRIDGE 12DFN

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
INTERSIL
24+
NA/
3375
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RENESAS(瑞薩)/IDT
24+
DFN12EP(4x4)
7350
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Renesa
25+
25000
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INTERSIL
22+
DFN12
8000
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INTERSIL
22+
QFN
18000
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RENESAS(瑞薩)/IDT
2447
DFN-12(4x4)
315000
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Intersil
24+
原廠封裝
5850
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Intersil
25+
12-DFN(4x4)
3216
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Intersil
2318+
VFDFN-12
6890
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INTERSIL
23+
QFN
10000
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