The HIP1020 applies a linear voltage ramp to the gates of any combination of 3.3V, 5V, and 12V MOSFETs. The internal charge pump doubles a 12V bias or triples a 5V bias to deliver the high-side drive capability required when using more cost-effective N-Channel MOSFETs. The 5V/ms ramp rate is controlled internally and is the proper value to turn on most devices within the Device-Bay-specified di/dt limit. If a slower rate is required, the internally-determined ramp rate can be over ridden using an optional external capacitor.

特性 Features

? Rise Time Controlled to Device-Bay Specifications

? No Additional Components Required

? Internal Charge Pump Drives N-Channel MOSFETs

? Drives any Combination of One, Two or Three Outputs

? Internally-Controlled Turn-On Ramp

- Optional Capacitor Selects Slower Rates

? Prevents False Turn on During Hot Insertion

? Operates using 12V or 5V Bias

? Improves Device Bay Peripheral Size Cost and Complexity

- Minimal Component Count

- Tiny 5-Pin SOT23 Package

? Controls Standard and Logic-Level MOSFETs

? Compatible with TTL and 3.3V Logic Devices

? Shutdown Current . . . . . . . . . . . . . . . . . . . . . . . . . . < 1μA

? Operating Current . . . . . . . . . . . . . . . . . . . . . . . . . .

Applications

? Device Bay Peripherals

? Hot Plug Control

? Power Distribution Control