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BZX585-C33

Marking:HH;Package:SC-79;Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanSOD523(SC-79)ultrasmallflatleadSurface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits ?Non-repetitivepeakreversepowerdissipation:≤40W ?Totalpowerdissipation:≤300mW ?Wideworkingvoltagerange:no

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

BZX585-C33

Marking:HH;Package:SOD523;Voltage regulator diodes

Featuresandbenefits ?Non-repetitivepeakreversepower dissipation:?40W ?Totalpowerdissipation:?300mW ?AEC-Q101qualified ?Wideworkingvoltagerange:nominal 2.4Vto75V(E24range) ?Twotoleranceseries:?2and?5 ?Lowdifferentialresistance

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

D3V3L1B2LP3Q-7

Marking:HH;Package:X3-DFN0603-2;LOW CAPACITANCE BIDIRECTIONAL TVS DIODE

Features ?ProvidesESDProtectionperIEC61000-4-2Standard: Air±30kV,Contact±30kV ?1ChannelofESDProtection ?LowChannelInputCapacitance ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(Note3) ?TheDIODES?D3V3L1B2LP3Qiss

DIODESDiodes Incorporated

美臺半導體

D3V3Z1BD2CSP-7

Marking:HH;Package:X2-DSN0603-2;LOW CAPACITANCE BIDIRECTIONAL TVS DIODE

Features ?ProvideTransientProtectionforTheProtectedLinetoIEC61000-4-2(ESD)Air±20kV,Contact±20VIEC61000-4-5(surge)10.5A(8/20μs) ?BidirectionalESDProtectionofOneLine ?ExtremelyLowCapacitanceCd=0.3pF ?ExtremelyLowClampingVoltagetoProtectSensitiveI/Os ?Low

DIODESDiodes Incorporated

美臺半導體

MMBZ16VTAL-Q

Marking:HH;Package:SOT23;High surge current unidirectional double ESD protection diodes

1.Generaldescription UnidirectionaldoubleElectroStaticDischarge(ESD)protectiondiodesinacommonanode configuration,encapsulatedinaSOT23(TO-236AB)smallSurface-MountedDevice(SMD)plastic package.ThedeviceisdesignedforESDandtransientovervoltageprotectionofuptotwos

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

NC7SZ32FHX

Marking:HH;Package:UDFN6;TinyLogic UHS Two-Input OR Gate

Description TheNC7SZ32isasingletwo?inputORgatefromonsemi’s Ultra?HighSpeed(UHS)seriesofTinyLogic.Thedeviceisfabricated withadvancedCMOStechnologytoachieveultra?highspeedwith highoutputdrivewhilemaintaininglowstaticpowerdissipationover abroadVCCoperatingr

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NC7SZ32L6X

Marking:HH;Package:SIP6;TinyLogic UHS Two-Input OR Gate

Description TheNC7SZ32isasingletwo?inputORgatefromonsemi’s Ultra?HighSpeed(UHS)seriesofTinyLogic.Thedeviceisfabricated withadvancedCMOStechnologytoachieveultra?highspeedwith highoutputdrivewhilemaintaininglowstaticpowerdissipationover abroadVCCoperatingr

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NC7SZ32L6X-L22175

Marking:HH;Package:SIP6;TinyLogic UHS Two-Input OR Gate

Description TheNC7SZ32isasingletwo?inputORgatefromonsemi’s Ultra?HighSpeed(UHS)seriesofTinyLogic.Thedeviceisfabricated withadvancedCMOStechnologytoachieveultra?highspeedwith highoutputdrivewhilemaintaininglowstaticpowerdissipationover abroadVCCoperatingr

ONSEMION Semiconductor

安森美半導體安森美半導體公司

P4SMAJ6.5

Marking:HH;Package:SMA;400W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

GlassPassivatedDieConstruction 400WPeakPulsePowerDissipation 5.0V–440VStandoffVoltage Uni-andBi-DirectionalVersionsAvailable ExcellentClampingVoltage TypicalResponseTime

WTEWon-Top Electronics

毅星電子毅星電子股份有限公司

PMV30XPA

Marking:HH;Package:SOT23;20 V, P-channel Trench MOSFET

1.Generaldescription P-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT23(TO-236AB) Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits ?Lowthresholdvoltage ?ExtendedtemperaturerangeTj=175°C ?TrenchMOSFET

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

詳細參數(shù)

  • 型號:

    HH

  • 制造商:

    ROEBUCK

  • 功能描述:

    ROEBUCK SQUEEGEE 24 WOODEN

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