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HGTP12N60C3分立半導體產(chǎn)品的晶體管-UGBT、MOSFET-單規(guī)格書PDF中文資料

廠商型號 |
HGTP12N60C3 |
參數(shù)屬性 | HGTP12N60C3 封裝/外殼為TO-220-3;包裝為管件;類別為分立半導體產(chǎn)品的晶體管-UGBT、MOSFET-單;產(chǎn)品描述:IGBT 600V 24A 104W TO220AB |
功能描述 | 24A, 600V, UFS Series N-Channel IGBTs |
封裝外殼 | TO-220-3 |
文件大小 |
119.57 Kbytes |
頁面數(shù)量 |
6 頁 |
生產(chǎn)廠商 | INTERSIL |
網(wǎng)址 | |
數(shù)據(jù)手冊 | |
更新時間 | 2025-8-10 23:01:00 |
人工找貨 | HGTP12N60C3價格和庫存,歡迎聯(lián)系客服免費人工找貨 |
HGTP12N60C3規(guī)格書詳情
The HGTP12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C.
特性 Features
? 24A, 600V at TC = 25°C
? 600V Switching SOA Capability
? Typical Fall Time. . . . . . . . . . . . . . . . 230ns at TJ = 150°C
? Short Circuit Rating
? Low Conduction Loss
產(chǎn)品屬性
- 產(chǎn)品編號:
HGTP12N60C3
- 制造商:
onsemi
- 類別:
分立半導體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單
- 包裝:
管件
- 不同?Vge、Ic 時?Vce(on)(最大值):
2V @ 15V,12A
- 開關能量:
380μJ(開),900μJ(關)
- 輸入類型:
標準
- 工作溫度:
-40°C ~ 150°C(TJ)
- 安裝類型:
通孔
- 封裝/外殼:
TO-220-3
- 供應商器件封裝:
TO-220-3
- 描述:
IGBT 600V 24A 104W TO220AB
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
24+ |
NA/ |
3271 |
原裝現(xiàn)貨,當天可交貨,原型號開票 |
詢價 | ||
onsemi(安森美) |
24+ |
TO220 |
7350 |
現(xiàn)貨供應,當天可交貨!免費送樣,原廠技術支持!!! |
詢價 | ||
FAIRCHILD |
23+ |
TO-220 |
9526 |
詢價 | |||
ON/安森美 |
25+ |
25000 |
原廠原包 深圳現(xiàn)貨 主打品牌 假一賠百 可開票! |
詢價 | |||
FAIRCHILDONSEMICONDUCTOR |
2026 |
650 |
原裝現(xiàn)貨支持BOM配單服務 |
詢價 | |||
FAIRCHILD |
25+ |
TO-220 |
4500 |
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售 |
詢價 | ||
FAIRCHIL |
24+ |
TO-220 |
8866 |
詢價 | |||
HGTP12N60C3 |
540 |
540 |
詢價 | ||||
ON/安森美 |
2410+ |
TO-220 |
180 |
原裝正品.假一賠百.正規(guī)渠道.原廠追溯. |
詢價 | ||
FSC/仙童 |
23+ |
TO-220 |
10065 |
原裝正品,有掛有貨,假一賠十 |
詢價 |