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HGTP10N50F1D中文資料INTERSIL數(shù)據(jù)手冊PDF規(guī)格書
HGTP10N50F1D規(guī)格書詳情
描述 Description
The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25℃ and +150℃. The diode used in parallel with the IGBT is an ultrafast (tRR
特性 Features
? 10A, 400V and 500V
? Latch Free Operation
? Typical Fall Time < 1.4μs
? High Input Impedance
? Low Conduction Loss
? Anti-Parallel Diode
? tRR
產(chǎn)品屬性
- 型號：
HGTP10N50F1D
- 制造商：
INTERSIL
- 制造商全稱：
Intersil Corporation
- 功能描述：
10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
24+ |
NA/ |
15638 |
原裝現(xiàn)貨,當天可交貨,原型號開票 |
詢價 | ||
FAIRCHILD |
23+ |
TO-220 |
9526 |
詢價 | |||
Intersil |
24+ |
TO-220 |
8866 |
詢價 | |||
仙童/INTERSI |
23+ |
TO-220 |
5000 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
英特錫爾 |
2447 |
TO-220 |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
ON Semiconductor |
2022+ |
TO-220-3 |
38550 |
全新原裝 支持表配單 中國著名電子元器件獨立分銷 |
詢價 | ||
HAR |
23+ |
65480 |
詢價 | ||||
INTERSIL |
22+ |
TO-220 |
6000 |
十年配單,只做原裝 |
詢價 | ||
24+ |
N/A |
64000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
HARRIS |
05+ |
原廠原裝 |
7786 |
只做全新原裝真實現(xiàn)貨供應 |
詢價 |
