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HGT1S7N60A4DS規(guī)格書詳情
The HGTG7N60A4D, HGTP7N60A4D and HGT1S7N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49331. The diode used in anti-parallel is the development type TA49370.
This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.
特性 Features
? >100kHz Operation At 390V, 7A
? 200kHz Operation At 390V, 5A
? 600V Switching SOA Capability
? Typical Fall Time. . . . . . . . . . . . . . . . . 75ns at TJ = 125°C
? Low Conduction Loss
? Temperature Compensating SABER? Model www.fairchildsemi.com
產品屬性
- 型號：
HGT1S7N60A4DS
- 功能描述：
IGBT 晶體管 600V N-Ch IGBT SMPS Series HF
- RoHS：
否
- 制造商：
Fairchild Semiconductor
- 配置：
集電極—發(fā)射極最大電壓
- VCEO：
650 V
- 集電極—射極飽和電壓：
2.3 V
- 柵極/發(fā)射極最大電壓：
20 V 在25
- C的連續(xù)集電極電流：
150 A
- 柵極—射極漏泄電流：
400 nA
- 功率耗散：
187 W
- 封裝/箱體：
TO-247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
1950+ |
TO-263 |
4856 |
只做原裝正品現貨!或訂貨假一賠十! |
詢價 | ||
Fairchild(飛兆/仙童) |
23+ |
NA |
20094 |
正納10年以上分銷經驗原裝進口正品做服務做口碑有支持 |
詢價 | ||
FAIRCHILD/仙童 |
23+ |
TO-263 |
9000 |
十七年VIP會員,誠信經營，一手貨源，原裝正品可零售！ |
詢價 | ||
FAIRCHILD/仙童 |
25+ |
TO-263 |
57488 |
百分百原裝現貨 實單必成 歡迎詢價 |
詢價 | ||
FAIRCHILD/仙童 |
08+ |
TO-263 |
8000 |
詢價 | |||
Fairchild/ON |
22+ |
TO263AB |
9000 |
原廠渠道,現貨配單 |
詢價 | ||
23+ |
TO263 |
7300 |
專注配單,只做原裝進口現貨 |
詢價 | |||
FAIRCHILD |
TO263 |
9850 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 | |||
FAIRCHILD/仙童 |
23+ |
TO263 |
10000 |
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
FAIRCHILD/仙童 |
24+ |
TO263 |
8950 |
BOM配單專家,發(fā)貨快,價格低 |
詢價 |
