The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array achieves very high fT (10GHz) while maintaining excellent hFE and VBE matching characteristics over temperature. Collector leakage currents are maintained to under 0.01nA.

特性 Features

? High Gain-Bandwidth Product (fT) . . . . . . . . . . . . . 10GHz

? High Power Gain-Bandwidth Product. . . . . . . . . . . . 5GHz

? High Current Gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . 70

? Noise Figure (Transistor) . . . . . . . . . . . . . . . . . . . . . 3.5dB

? Low Collector Leakage Current . . . . . . . . . . . . . . <0.01nA

? Excellent hFE and VBE Matching

? Pin-to-Pin to UPA102G

? Pb-Free Plus Anneal Available (RoHS Compliant)

Applications

? Single Balanced Mixers

? Wide Band Amplification Stages

? Differential Amplifiers

? Multipliers

? Automatic Gain Control Circuits

? Frequency Doublers, Tripplers

? Oscillators

? Constant Current Sources

? Wireless Communication Systems

? Radio and Satellite Communications

? Fiber Optic Signal Processing

? High Performance Instrumentation