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IRF520

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinfor

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF520

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS

APPLICATIONS nHIGHCURRENT,HIGHSPEEDSWITCHING nSOLENOIDANDRELAYDRIVERS nREGULATORS nDC-DC&DC-ACCONVERTERS nMOTORCONTROL,AUDIOAMPLIFIERS nAUTOMOTIVEENVIRONMENT(INJECTION, ABS,AIR-BAG,LAMPDRIVERS,Etc.)

SYC

SYC Electronica

IRF520A

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■175°COperatingTemperature ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.155Ω(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF520A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF520FI

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS ■TYPICALRDS(on)=0.23? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE APPLICATIONS ■HIGHCURRENT,HIGHSPE

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF520FI

iscN-ChannelMOSFETTransistor

?DESCRITION ?HighCurrent,HighSpeedSwitching ?DC-DC&DC-ACConverters ?MotorControl,AudioAmplifiers ?FEATURES ?TypicalRDS(on)=0.23Ω ?AvalancheRuggedTechnology ?HighCurrentCapability ?LowGateCharge ?175℃OperatingTemperature

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF520L

PowerMOSFET(Vdss=100V,Rds(on)=0.20ohm,Id=9.7A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF520N

PowerMOSFET(Vdss=100V,Rds(on)=0.20Ohm,Id=9.7A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF520N

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF520NL

Low-profilethrough-hole(IRF520NL)

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowin

KERSEMI

Kersemi Electronic Co., Ltd.

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
GOOD-ARK
23+
NA
39960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
JST/日壓
2508+
/
470984
一級(jí)代理，原裝現(xiàn)貨
 詢價(jià)
HVCA
新
5
全新原裝 貨期兩周
 詢價(jià)
MDD
21+
DO-27
12588
原裝正品,價(jià)格優(yōu)勢(shì)
 詢價(jià)
HVCA
2022+
1
全新原裝 貨期兩周
 詢價(jià)
群鑫
22+
R-6/P600
30911
原裝正品,一級(jí)代理
 詢價(jià)
HYG
2023+
R-6
5800
進(jìn)口原裝,現(xiàn)貨熱賣
 詢價(jià)
JX
23+
DO-27
7600
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
JX
23+
DO-27
7600
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
Micro Commercial Co
25+
R-6
9350
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證
 詢價(jià)
更多HER520T供應(yīng)商 更新時(shí)間2025-7-22 17:24:00

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