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H5TQ4G63EFR

DDR3 SDRAM; ? VDD=VDDQ=1.5V +/- 0.075V? Fully differential clock inputs (CK, CK) operation? Differential Data Strobe (DQS, DQS)? On chip DLL align DQ, DQS and DQS transition with CK transition? DM masks write data-in at the both rising and falling edges of the data strobe? All addresses and control inputs except data, data strobes and data masks latched on the rising edges of the clock? Programmable CAS latency 5, 6, 7, 8, 9, 10, 11, 13 and 14 supported? Programmable additive latency 0, CL-1, and CL-2 supported? Programmable CAS Write latency (CWL) = 5, 6, 7, 8, 9 and 10? Programmable burst length 4/8 with both nibble sequential and interleave mode? BL switch on the fly? 8banks? Average Refresh Cycle (Tcase of 0 oC~ 95 oC)? - 7.8 μs at 0oC ~ 85 oC? - 3.9 μs at 85oC ~ 95 oC? - 1.95 μs at 85oC ~ 95 oC? Commercial Temperature( 0oC ~ 95 oC)? Industrial Temperature( -40oC ~ 95 oC)? Automotive Temperature( -40oC ~ 105 oC)? JEDEC standard 78ball FBGA(x8), 96ball FBGA (x16)? Driver strength selected by EMRS? Dynamic On Die Termination supported? Asynchronous RESET pin supported? ZQ calibration supported? TDQS (Termination Data Strobe) supported (x8 only)? Write Levelization supported? 8 bit pre-fetch\n;

The H5TQ4G83EFR-xxC,H5TQ4G63EFR-xxC, H5TQ4G83EFR-xxI, H5TQ4G63EFR-xxI, H5TQ4G83EFR-xxL, H5TQ4G63EFR-xxL, H5TQ4G83EFR-xxJ, H5TQ4G63EFR-xxJ, H5TQ4G83EFR-xxK and H5TQ4G63EFR-xxK are a 4,294,967,296-bit CMOS Double Data Rate III (DDR3) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. SK Hynix 4Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.

SK hynixHynix Semiconductor

海力士海力士半導(dǎo)體

H5TQ4G63EFR-RDC

DDR DDR3;

SK hynixHynix Semiconductor

海力士海力士半導(dǎo)體

H5TQ4G63EFR-RDF

DDR DDR3;

SK hynixHynix Semiconductor

海力士海力士半導(dǎo)體

H5TQ4G63AFR-PBC

4GbDDR3SDRAM

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

H5TQ4G63AFR-RDC

4GbDDR3SDRAM

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

H5TQ4G63AFR-TEC

4GbDDR3SDRAM

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

H5TQ4G63MFR-PBC

4GbDDR3SDRAM

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

H5TQ4G63MFR-RDC

4GbDDR3SDRAM

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

技術(shù)參數(shù)

  • Org.:

    x16

  • Vol:

    1.5V

  • Speed:

    G7/H9/PB/RD/TE

  • Power:

    Normal Power

  • PKG:

    FBGA

  • Product Status:

    Mass production

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
SKHYNIX
24+
BGA
23000
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
詢價(jià)
N/A
24+
N/A
9548
原廠可訂貨,技術(shù)支持,直接渠道??珊灡9┖贤?/div>
詢價(jià)
SKHYNIX
23+
BGA
10000
原廠授權(quán)一級(jí)代理,專(zhuān)業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
詢價(jià)
SKHYNIX
1712+
BGA
18
一級(jí)代理,專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)、新能源、電力
詢價(jià)
SKHYNIX
24+
BGA
5000
全新原裝正品,現(xiàn)貨銷(xiāo)售
詢價(jià)
SKHYNIX
22+23+
BGA
8000
新到現(xiàn)貨,只做原裝進(jìn)口
詢價(jià)
SKHYNIX
24+
BGA
5000
只有原裝
詢價(jià)
SKHYNIX
21+
BGA
28
原裝現(xiàn)貨假一賠十
詢價(jià)
25+23+
24571
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
詢價(jià)
SKHYNIX
18+
FBGA
85600
保證進(jìn)口原裝可開(kāi)17%增值稅發(fā)票
詢價(jià)
更多H5TQ4G63EFR供應(yīng)商 更新時(shí)間2025-7-29 10:12:00