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NTH4L070N120M3S

Marking：H4L070120M3S；Package：TO-247-4L；Silicon Carbide (SiC) MOSFET – EliteSiC, 65 mohm, 1200V, M3S, TO-247-4L

Features ?Typ.RDS(on)=65m@VGS=18V ?UltraLowGateCharge(QG(tot)=57nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=57pF) ?100AvalancheTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalA

ONSEMION Semiconductor

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NVH4L070N120M3S

Marking：H4L070120M3S；Package：TO-247-4L；Silicon Carbide (SiC) MOSFET – EliteSiC, 65 mohm, 1200V, M3S, TO-247-4L

Features ?Typ.RDS(on)=65m@VGS=18V ?UltraLowGateCharge(QG(tot)=57nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=57pF) ?100AvalancheTested ?AEC?Q101QualifiedandPPAPCapable ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(ons

ONSEMION Semiconductor

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