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MA7001AA

Marking：H2YWX；Package：SOT23-3L；MicroPower, Ultra-sensitive Hall Effect Switch

GENERALDESCRIPTION MA7001isathree-terminalHallEffectsensordevicewithanoutputdriver,mainly designedforbattery–operation,hand-heldequipment(suchasCellularandCordlessPhone, PDA). TheoutputisswitchwitheithernorthorSouthPoleofsufficientstrengthwillturnthe outp

MA7001B553A

Marking：H2YW；Package：SOT553；MicroPower, Ultra-sensitive Hall Effect Switch

GENERALDESCRIPTION MA7001isathree-terminalHallEffectsensordevicewithanoutputdriver,mainly designedforbattery–operation,hand-heldequipment(suchasCellularandCordlessPhone, PDA). TheoutputisswitchwitheithernorthorSouthPoleofsufficientstrengthwillturnthe outp

MA7001EAA

Marking：H2YWX；Package：SOT23-3L；MicroPower, Ultra-sensitive Hall Effect Switch

GENERALDESCRIPTION MA7001Eisathree-terminalHallEffectsensordevicewithanoutputdriver,mainly designedforbattery–operation,hand-heldequipment(suchasCellularandCordlessPhone, PDA). TheoutputisswitchwitheithernorthorSouthPoleofsufficientstrengthwillturnthe out

PESDNC2FD12VBHD2

Marking：H2C；Package：DFN1006-2L；Bi-directional 12V Normal Capacitance ESD Protecto r

Description ThePESDNC2FD12VBHD2protectssensitivesemiconductorcomponentsfromdamageorupsetdueto electrostaticdischarge(ESD)andothervoltageinducedtransientevents. Itgivesdesignertheflexibilitytoprotectonebi-directionallineinapplicationswherearraysarenotpractical.

RT9012-NNGQW

Marking：H2*；Package：VDFN-82x2；300mA Dual LDO Regulator with POR

GeneralDescription RT9012isadualchannel,lownoise,andlowdropoutwiththesourcingabilityupto300mAandpower-onresetfunction.Therangeofoutputvoltageisfrom1.2Vto3.6Vbyoperatingfrom2.5Vto5.5Vinput. Features ?WideOperatingVoltageRanges:2.5Vto5.5V ?Low-Noise

SN65HVD230MDREP

Marking：H230EP；Package：SOIC；3.3-V CAN TRANSCEIVERS

FEATURES ControlledBaseline ?OneAssembly/TestSite,OneFabrication Site ExtendedTemperaturePerformanceof?55°C to125°C EnhancedDiminishingManufacturing Sources(DMS)Support EnhancedProduct-ChangeNotification QualificationPedigree? OperatesWitha3.3-VSupply LowPowerRep

SN65HVD230MDREP.A

Marking：H230EP；Package：SOIC；3.3-V CAN TRANSCEIVERS

FEATURES ControlledBaseline ?OneAssembly/TestSite,OneFabrication Site ExtendedTemperaturePerformanceof?55°C to125°C EnhancedDiminishingManufacturing Sources(DMS)Support EnhancedProduct-ChangeNotification QualificationPedigree? OperatesWitha3.3-VSupply LowPowerRep

SN65HVD233MDREP

Marking：H233EP；Package：SOIC；3.3-V CAN TRANSCEIVER

FEATURES ·Bus-PinFaultProtectionExceeds±36V ·Bus-PinESDProtectionExceeds16-kVHBM ·CompatibleWithISO11898 ·SignalingRates(1)upto1Mbps ·Extended–7-Vto12-VCommon-ModeRange ·High-InputImpedanceAllowsfor120Nodes ·LVTTLI/OsAre5-VTolerant ·AdjustableDriver

SN65HVD233MDREP.A

Marking：H233EP；Package：SOIC；3.3-V CAN TRANSCEIVER

FEATURES ·Bus-PinFaultProtectionExceeds±36V ·Bus-PinESDProtectionExceeds16-kVHBM ·CompatibleWithISO11898 ·SignalingRates(1)upto1Mbps ·Extended–7-Vto12-VCommon-ModeRange ·High-InputImpedanceAllowsfor120Nodes ·LVTTLI/OsAre5-VTolerant ·AdjustableDriver

SN74AUP1G125DBVR

Marking：H25R；Package：SOT-23；SN74AUP1G125 Low-Power Single Bus Buffer Gate With 3-State Output

1Features 1?AvailableintheTexasInstrumentsNanoStar? Package ?LowStatic-PowerConsumption (ICC=0.9μAMaximum) ?LowDynamic-PowerConsumption (Cpd=4pFTypicalat3.3V) ?LowInputCapacitance(CI=1.5pFTypical) ?LowNoise–OvershootandUndershoot