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H11B2TA-V

6PINPHOTODARLINGTONPHOTOCOUPLER

Description TheTIL113,4NXXandH11BXseriesofdeviceseachconsistofaninfraredemittingdiodeopticallycoupledtoaphotodarlingtondetector. Theyarepackagedina6-pinDIPpackageandavailableinwide-leadspacingandSMDoption. Features: ?4NXXseries:4N29,4N30,4N31,4N32,4N3

EverlightEverlight Electronics Co., Ltd

臺(tái)灣億光億光電子工業(yè)股份有限公司

H11B2TB-V

6PINPHOTODARLINGTONPHOTOCOUPLER

Description TheTIL113,4NXXandH11BXseriesofdeviceseachconsistofaninfraredemittingdiodeopticallycoupledtoaphotodarlingtondetector. Theyarepackagedina6-pinDIPpackageandavailableinwide-leadspacingandSMDoption. Features: ?4NXXseries:4N29,4N30,4N31,4N32,4N3

EverlightEverlight Electronics Co., Ltd

臺(tái)灣億光億光電子工業(yè)股份有限公司

H11B2-V

6PINPHOTODARLINGTONPHOTOCOUPLER

Description TheTIL113,4NXXandH11BXseriesofdeviceseachconsistofaninfraredemittingdiodeopticallycoupledtoaphotodarlingtondetector. Theyarepackagedina6-pinDIPpackageandavailableinwide-leadspacingandSMDoption. Features: ?4NXXseries:4N29,4N30,4N31,4N32,4N3

EverlightEverlight Electronics Co., Ltd

臺(tái)灣億光億光電子工業(yè)股份有限公司

H11B2X

OPTICALLYCOUPLEDISOLATORPHOTODARLINGTONOUTPUT

DESCRIPTION TheH11B_seriesofopticallycoupledisolatorsconsistofaninfraredlightemittingdiodeandNPNsiliconphotodarlingtoninaspaceefficientdualinlineplasticpackage. FEATURES ●Options:- 10mmleadspread-addGafterpartno. Surfacemount-addSMafterpartno.

ISOCOMISOCOM COMPONENTS

英國(guó)安數(shù)光

HZ11B2

Glass-EncapsulateDiodes

HOTTECHGuangdong Hottech Co. Ltd.

合科泰深圳市合科泰電子有限公司

HZ11B2

SILICONEPITAXIALPLANERZENERDIODES

forstabilizedpowersupply Features ?Lowleakage,lowzenerimpedanceandmaximumpowerdissipationof500mWareideallysuitedforstabilizedpowersupply,etc. ?Widespectrumfrom1.6Vthrough38Vofzenervoltageprovideflexibleapplication.

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半導(dǎo)體先之科半導(dǎo)體科技（東莞）有限公司

HZ11B2

SiliconEpitaxialPlanarZenerDiodeforStabilizedPowerSupply

Features ?Lowleakage,lowzenerimpedanceandmaximumpowerdissipationof500mWareideallysuitedforstabilizedpowersupply,etc. ?Widespectrumfrom1.6Vthrough38Vofzenervoltageprovideflexibleapplication.

HitachiHitachi Semiconductor

日立日立公司

HZ11B2

SiliconEpitaxialPlanarZenerDiodeforStabilizedPowerSupply

Features ?Lowleakage,lowzenerimpedanceandmaximumpowerdissipationof500mWareideallysuitedforstabilizedpowersupply,etc. ?Widespectrumfrom1.6Vthrough38Vofzenervoltageprovideflexibleapplication.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HZS11B2

SiliconEpitaxialPlanarZenerDiodeforStabilizedPowerSupply

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HZU11B2

SiliconEpitaxialPlanarZenerDiodesforStabilizer

Features ?UltrasmallResinPackage(URP)issuitableforsurfacemountdesign. ?Thesediodesaredeliveredtaped.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

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