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型號：2SJ648；Package：SC-75；MOS FIELD EFFECT TRANSISTOR

P-CHANNELMOSFIELDEFFECTTRANSISTOR FORSWITCHING DESCRIPTION The2SJ648isaswitchingdevicewhichcanbedrivendirectlybya 2.5Vpowersource. The2SJ648featuresalowon-stateresistanceandexcellent switchingcharacteristics,andissuitableforapplicationssuchas powerswit

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型號：BCW69；Package：SOT23；PNP general purpose transistors

1.Generaldescription PNPgeneral-purposetransistorinasmallSOT23Surface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits ?Lowcurrent(max.100mA) ?Lowvoltage(max.45V) ?AEC-Q101qualified 3.Applications ?Generalpurposeswitchingandamplification

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型號：BCW69；Package：SOT23；PNP general purpose transistors

FEATURES ?Lowcurrent(max.100mA) ?Lowvoltage(max.45V). APPLICATIONS ?Generalpurposeswitchingandamplification. DESCRIPTION PNPtransistorinaSOT23plasticpackage.NPNcomplements:BCW71andBCW72.

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型號：BZD27C180P；Voltage Regulator Diodes

Features ◇Silliconplanarzenerdiodes. ◇Lowprofilesurface-mountpackage. ◇Zenerandsurgecurrentspecification ◇Lowleakagecurrent ◇Excellentstability ◇Hightemperaturesolderingguaranteed:265℃/10seconds,atterminals

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型號：BZD27C180P；Package：SOD-123FL；Voltage Regulator Diodes

Features ◇Silliconplanarzenerdiodes. ◇Lowprofilesurface-mountpackage. ◇Zenerandsurgecurrentspecification ◇Lowleakagecurrent ◇Excellentstability ◇Hightemperaturesolderingguaranteed:265℃/10seconds,atterminals

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型號：BZX585-C6V2；Package：SC-79；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanSOD523(SC-79)ultrasmallflatleadSurface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits ?Non-repetitivepeakreversepowerdissipation:≤40W ?Totalpowerdissipation:≤300mW ?Wideworkingvoltagerange:no

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型號：BZX585-C6V2；Package：SOD523；Voltage regulator diodes

Featuresandbenefits ?Non-repetitivepeakreversepower dissipation:?40W ?Totalpowerdissipation:?300mW ?AEC-Q101qualified ?Wideworkingvoltagerange:nominal 2.4Vto75V(E24range) ?Twotoleranceseries:?2and?5 ?Lowdifferentialresistance

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型號：EMH1；Package：EMT6；General purpose (dual digital transistors)

Features 1)TwoDTC124EchipsinaEMTorUMTorSMTpackage.

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型號：HSP051-4M5；Package：uQFN-5L；4-line ESD protection for high speed lines

Description TheHSP051-4M5andHSP053-4M5area4-channelESDarraywitharailtorail architecturedesignedspecificallyfortheprotectionofhighspeeddifferentiallines. ThedeviceispackagedinμQFN1.3mmx0.8mmwitha500μmpitch. Features ?Verycompact500μmpitchpackage,f

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型號：IMH1A；Package：SOT-26；General purpose (dual digital transistors)

Features 1)TwoDTC124EchipsinaEMTorUMTorSMTpackage.