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H18N65ANFT

型號：HRH18N65ANFT；Package：TO-220F；650V N-Channel Planar MOSFET

Features RDSON=0.48Ω@Vgs=10V,Id=9A LowgateCharge(typical52nC) LowCrss(typical1.9pF) Fastswitchingcapability 100%avalanchetested Improveddv/dtcapability Applications SwitchModePowerSupply UninterruptiblePowerSupply(UPS) TVPower Adapter/Charger

H18N65ANP

型號：HRH18N65ANP；Package：TO-220；650V N-Channel Planar MOSFET

Features RDSON=0.48Ω@Vgs=10V,Id=9A LowgateCharge(typical52nC) LowCrss(typical1.9pF) Fastswitchingcapability 100%avalanchetested Improveddv/dtcapability Applications SwitchModePowerSupply UninterruptiblePowerSupply(UPS) TVPower Adapter/Charger

H18N65ANV

型號：HRH18N65ANV；Package：TO-3P；650V N-Channel Planar MOSFET

Features RDSON=0.48Ω@Vgs=10V,Id=9A LowgateCharge(typical52nC) LowCrss(typical1.9pF) Fastswitchingcapability 100%avalanchetested Improveddv/dtcapability Applications SwitchModePowerSupply UninterruptiblePowerSupply(UPS) TVPower Adapter/Charger

H18N65ANW

型號：HRH18N65ANW；Package：TO-247；650V N-Channel Planar MOSFET

Features RDSON=0.48Ω@Vgs=10V,Id=9A LowgateCharge(typical52nC) LowCrss(typical1.9pF) Fastswitchingcapability 100%avalanchetested Improveddv/dtcapability Applications SwitchModePowerSupply UninterruptiblePowerSupply(UPS) TVPower Adapter/Charger

H18N65AP

型號：HRH18N65AP；Package：TO-220；650V N-Channel Planar MOSFET

Features RDSON≤0.55Ω@Vgs=10V,Id=9A LowgateCharge(typical52nC) LowCrss(typical1.9pF) Fastswitchingcapability 100%avalanchetested Improveddv/dtcapability Applications SwitchModePowerSupply(SMPS) UninterruptiblePowerSupply(UPS) PowerFactorCorrection(PFC)(PFC) C

H1N65AD

型號：HRH1N65AD；Package：TO-252；650V N-Channel Planar MOSFET

Features RDSON≤12Ω@Vgs=10V,Id=0.5A UltraLowgateCharge(typicaltypical5.7nC) Crss(typicaltypical0.87pF) Fastswitchingcapability %avalanchetested Improveddv/dtcapability Applications SwitchModePowerSupply( UninterruptiblePowerSupply(UPS) PowerFactorCorrection(

H1N65AF

型號：HRH1N65AF；Package：TO-220F；650V N-Channel Planar MOSFET

Features RDSON≤12Ω@Vgs=10V,Id=0.5A UltraLowgateCharge(typicaltypical5.7nC) Crss(typicaltypical0.87pF) Fastswitchingcapability %avalanchetested Improveddv/dtcapability Applications SwitchModePowerSupply( UninterruptiblePowerSupply(UPS) PowerFactorCorrection(

H1N65AP

型號：HRH1N65AP；Package：TO-220；650V N-Channel Planar MOSFET

Features RDSON≤12Ω@Vgs=10V,Id=0.5A UltraLowgateCharge(typicaltypical5.7nC) Crss(typicaltypical0.87pF) Fastswitchingcapability %avalanchetested Improveddv/dtcapability Applications SwitchModePowerSupply( UninterruptiblePowerSupply(UPS) PowerFactorCorrection(

H1N65AU

型號：HRH1N65AU；Package：TO-251；650V N-Channel Planar MOSFET

Features RDSON≤12Ω@Vgs=10V,Id=0.5A UltraLowgateCharge(typicaltypical5.7nC) Crss(typicaltypical0.87pF) Fastswitchingcapability %avalanchetested Improveddv/dtcapability Applications SwitchModePowerSupply( UninterruptiblePowerSupply(UPS) PowerFactorCorrection(

H11

型號：IMH11A；Package：SOT-26；General purpose (dual digital transistors)

Features 1)TwoDTC114EchipsinaEMTorUMTorSMTpackage. 2)MountingpossiblewithEMT3orUMT3orSMT3automaticmountingmachines. 3)Transistorelementsareindependent,eliminatinginterference. 4)Mountingcostandareacanbecutinhalf.