描述 Description

The GTVA126001EC and GTVA126001FC are 600-watt GaN on SiC high

electron mobility transistors (HEMT) for use in the DC - 1.4 GHz frequecy

band. They feature input matching, high efficiency, and thermallyenhanced packages.

特性 Features

? GaN on SiC HEMT technology

? Input matched

? Typical pulsed CW performance (class AB), 1200 MHz,

50 V, 300 μs pulse width, 10 duty cycle

- Output power (P3dB) = 600 W

- Drain efficiency = 65

- Gain = 18 dB

? Capable of withstanding a 10:1 load

mismatch (all phase angles) at 600 W peak power

under pulsed conditions: 300 μs pulse width, 10

duty cycle, VDD = 50 V, IDQ = 100 mA

? Human Body Model Class 1C (per AnSI/ESDA/JEDEC

JS-001)

? Pb-free and RoHS compliant