特性 Features

? 700 V enhancement mode power transistor

? 850 V transient drain-to-source voltage

? Bottom-cooled, small 5x6 mm PDFN package

? RDS(on) = 315 m?

? IDSmax,DC = 4.6 A / IDSmax,Pulse = 7.8 A

? Ultra-low FOM

? Simple gate drive requirements (0 V to 6 V)

? Transient tolerant gate drive (-20 V / +10 V)

? High switching frequency (> 1 MHz)

? Fast and controllable fall and rise times

? Reverse conduction capability

? Zero reverse recovery loss

? Source Sense (SS) pin for optimized gate drive

? RoHS 3 (6+4) compliant

Applications

? Power Adapters

? LED lighting drivers

? Fast Battery Charging

? Power Factor Correction

? Appliance Motor Drives

? Wireless Power Transfer

? Industrial Power Supplies

描述 Description

The GS-065-004-6-L is an enhancement mode GaN-onSilicon power transistor. The properties of GaN allow for

high current, high voltage breakdown and high switching

frequency. GaN Systems innovates with industry leading

advancements such as patented Island Technology? cell

layout which realizes high-current die and high yield. The

GS-065-004-6-L is a bottom-side cooled transistor that

offers very low junction-to-case thermal resistance for

demanding high power applications. These features

combine to provide very high efficiency power switching.