首頁 >GPT13N50C>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
POWERFIELDEFFECTTRANSISTOR GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedtermination schemetoprovideenhancedvoltage-blockingcapability withoutdegradingperformanceovertime.Inaddition,this advancedMOSFETisdesignedtowithstandhighenergyin avalancheandcommutationmodes.Thenewenergy | GREATPOWERGreatpower Microelectronic Corp. 冠順微電子深圳冠順微電子有限公司 | GREATPOWER | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergy | HuashanSHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD 華汕電子器件汕頭華汕電子器件有限公司 | Huashan | ||
500VN-ChannelMOSFET FEATURES ?OriginativeNewDesign ?SuperiorAvalancheRuggedTechnology ?RobustGateOxideTechnology ?VeryLowIntrinsicCapacitances ?ExcellentSwitchingCharacteristics ?UnrivalledGateCharge:38nC(Typ.) ?ExtendedSafeOperatingArea ?LowerRDS(ON):0.39Ω(Typ.)@VGS=10V ? | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
SuperiorAvalancheRuggedTechnology FEATURES ?OriginativeNewDesign ?SuperiorAvalancheRuggedTechnology ?RobustGateOxideTechnology ?VeryLowIntrinsicCapacitances ?ExcellentSwitchingCharacteristics ?UnrivalledGateCharge:34nC(Typ.) ?ExtendedSafeOperatingArea ?LowerRDS(ON):0.39Ω(Typ.)@vGS=10V ? | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
500VN-ChannelMOSFET | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
SuperiorAvalancheRuggedTechnology | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
siliconN-channelEnhancedVDMOSFETs | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司 | HMSEMI | ||
500VN-ChannelPlanarMOSFET Features RDSON=0.48Ω@Vgs=10V,Id=6.5A LowgateCharge(typical30.9nC) LowCrss(typical0.78pF) Fastswitchingcapability 100avalanchetested Improveddv/dtcapability HalogenfreeandRoHScompliant Applications SwitchModePowerSupply UninterruptiblePowerSupply(UPS) TVPower A | SYChangzhou Shunye Electronics Co.,Ltd. 順燁電子江蘇順燁電子有限公司 | SY | ||
500VN-ChannelPlanarMOSFET Features RDSON=0.48Ω@Vgs=10V,Id=6.5A LowgateCharge(typical30.9nC) LowCrss(typical0.78pF) Fastswitchingcapability 100avalanchetested Improveddv/dtcapability HalogenfreeandRoHScompliant Applications SwitchModePowerSupply UninterruptiblePowerSupply(UPS) TVPower A | SYChangzhou Shunye Electronics Co.,Ltd. 順燁電子江蘇順燁電子有限公司 | SY | ||
500VN-ChannelPlanarMOSFET Features RDSON=0.48Ω@Vgs=10V,Id=6.5A LowgateCharge(typical30.9nC) LowCrss(typical0.78pF) Fastswitchingcapability 100avalanchetested Improveddv/dtcapability HalogenfreeandRoHScompliant Applications SwitchModePowerSupply UninterruptiblePowerSupply(UPS) TVPower A | SYChangzhou Shunye Electronics Co.,Ltd. 順燁電子江蘇順燁電子有限公司 | SY |
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