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P25Q21HA-NXH-KW

UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半導體(上海)股份有限公司

P25Q21HA-NXH-KY

UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半導體(上海)股份有限公司

P25Q21HA-SSH-IR

UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半導體(上海)股份有限公司

P25Q21HA-SSH-IT

UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半導體(上海)股份有限公司

P25Q21HA-SSH-IW

UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半導體(上海)股份有限公司

P25Q21HA-SSH-IY

UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半導體(上海)股份有限公司

P25Q21HA-SSH-KR

UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半導體(上海)股份有限公司

P25Q21HA-SSH-KT

UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半導體(上海)股份有限公司

P25Q21HA-SSH-KW

UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半導體(上海)股份有限公司

P25Q21HA-SSH-KY

UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半導體(上海)股份有限公司

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21+
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12588
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15
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6000
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20+
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11520
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2447
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100500
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10000
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23+
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20000
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20
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2023+
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6895
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GD/兆易創(chuàng)新
1532+
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20
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更多GD25Q21ATIGT供應商 更新時間2025-7-12 16:15:00