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GC380N60KE

絲印：GC380N60E；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description TheGC380N60KEusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

GC380N60KE

MOSFET;

Power MOSFETs find widespread use across various applications due to their low ON resistance, making them particularly appealing. By minimizing power dissipation, they contribute to cost reduction, smaller form factors, and less cooling requirements, resulting in significant enhancements for electronic power systems. Goford offers a comprehensive range of power MOSFETs, serving diverse industries, including the automotive market, with advanced and efficient packaging options.

FCD380N60E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.38Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

FCD380N60E

FCD380N60EN-ChannelSuperFETIIEasy-DriveMOSFET600V,10.2A,380m廓

FCD380N60E

N-ChannelSuperFET?IIMOSFET600V,10.2A,380m廓

FCD380N60ECT-ND

FCD380N60EN-ChannelSuperFETIIEasy-DriveMOSFET600V,10.2A,380m廓

FCP380N60

FCP380N60/FCPF380N60N-ChannelSuperFETIIMOSFET600V,10.2A,380m廓

FCP380N60

N-ChannelSuperFETIIMOSFET

FCP380N60

iscN-ChannelMOSFETTransistor

FCP380N60

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti