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GC20N60K

Marking：GC20N60；Package：TO-252；Power Factor Correction (PFC)

Description TheGC20N60usesadvancedsuperjunctiontechnology anddesigntoprovideexcellentRDS(ON),lowgatechargeand operationwithlowgatevoltages.Thisdeviceissuitablefor industry’sAC-DCSMPSrequirementforPFC,AC/DCpower conversion,andindustrialpowerapplication. Ap

GC20N60K

MOSFET;

Power MOSFETs find widespread use across various applications due to their low ON resistance, making them particularly appealing. By minimizing power dissipation, they contribute to cost reduction, smaller form factors, and less cooling requirements, resulting in significant enhancements for electronic power systems. Goford offers a comprehensive range of power MOSFETs, serving diverse industries, including the automotive market, with advanced and efficient packaging options.

GC20N60T

PowerFactorCorrection(PFC)

Description TheGC20N60usesadvancedsuperjunctiontechnology anddesigntoprovideexcellentRDS(ON),lowgatechargeand operationwithlowgatevoltages.Thisdeviceissuitablefor industry’sAC-DCSMPSrequirementforPFC,AC/DCpower conversion,andindustrialpowerapplication. Ap

HIA20N60BP

600VPTIGBT

HIH20N60BP

600VPTIGBT

HM20N60

thesiliconN-channelEnhancedVDMOSFETs

HM20N60A

thesiliconN-channelEnhancedVDMOSFETs

HM20N60F

thesiliconN-channelEnhancedVDMOSFETs

HMG20N60A

20A,600Vinsulatedgatebipolartransistor

IKB20N60T

IGBTinTrenchandFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmConHEdiode

LowLossDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmConHEdiode ?VerylowVCE(sat)1.5V(typ.) ?MaximumJunctionTemperature175°C ?Shortcircuitwithstandtime–5μs ?Designedfor: -FrequencyConverters -UninterruptedPowerS