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GAN111-650WSB中文資料安世數據手冊PDF規(guī)格書
GAN111-650WSB規(guī)格書詳情
1. General description
The GAN111-650WSB is a 650 V, 97 mΩ Gallium Nitride (GaN) FET in a TO-247 package. It is a
normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and
low-voltage silicon MOSFET technologies — offering superior reliability and performance.
2. Features and benefits
? Ultra-low reverse recovery charge
? Simple gate drive (0 V to +10 V or +12 V)
? Robust gate oxide (±20 V capability)
? High gate threshold voltage (+4 V) for very good gate bounce immunity
? Very low source-drain voltage in reverse conduction mode
? Transient over-voltage capability
3. Applications
? Hard and soft switching converters for industrial and datacom power
? AC/DC Bridgeless totem-pole PFC
? DC/DC High-frequency resonant converters
? Datacom and telecom (AC/DC and DC/DC) converters
? Solar (PV) inverters
? Servo motor drives
? TV PSU and LED drivers
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor |
24+ |
DO/TO |
986 |
碳化硅二極管原廠正品全系列現貨 |
詢價 | ||
PMI |
00+ |
DIP |
7 |
原裝現貨支持BOM配單服務 |
詢價 | ||
GOLDENTEK DISPLAY AMERICA |
23+ |
SMD |
880000 |
明嘉萊只做原裝正品現貨 |
詢價 | ||
CentralLAb |
5600 |
公司優(yōu)勢庫存 熱賣中!! |
詢價 | ||||
PMI |
22+ |
DIP |
5000 |
進口原裝!現貨庫存 |
詢價 | ||
AMPHENOL |
2022+ |
原廠原包裝 |
8600 |
全新原裝 支持表配單 中國著名電子元器件獨立分銷 |
詢價 | ||
高登 |
25+ |
DIP |
2200 |
國產替換現貨降本 |
詢價 | ||
HIRSCHMANN |
23+ |
748228 |
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | |||
24+ |
N/A |
65000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
GeneSiC |
25+ |
電聯咨詢 |
7800 |
公司現貨,提供拆樣技術支持 |
詢價 |
