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GAL22V10B-10LPI

High Performance E2CMOS PLD Generic Array Logic?; ? HIGH PERFORMANCE E2CMOS?TECHNOLOGY\n— 4 ns Maximum Propagation Delay\n— Fmax = 250 MHz\n— 3.5 ns Maximum from Clock Input to Data Output\n— UltraMOS?Advanced CMOS Technology\n? ACTIVE PULL-UPS ON ALL PINS\n? COMPATIBLE WITH STANDARD 22V10 DEVICES\n— Fully Function/Fuse-Map/Parametric Compatible with Bipolar and UVCMOS 22V10 Devices\n? 50% to 75% REDUCTION IN POWER VERSUS BIPOLAR\n— 90mA Typical Icc on Low Power Device\n— 45mA Typical Icc on Quarter Power Device\n?E2CELL TECHNOLOGY\n— Reconfigurable Logic\n— Reprogrammable Cells\n— 100% Tested/100% Yields\n— High Speed Electrical Erasure (<100ms)\n— 20 Year Data Retention\n? TEN OUTPUT LOGIC MACROCELLS\n— Maximum Flexibility for Complex Logic Designs\n? PRELOAD AND POWER-ON RESET OF REGISTERS\n— 100% Functional Testability\n? APPLICATIONS INCLUDE:\n— DMA Control\n— State Machine Control\n— High Speed Graphics Processing\n— Standard Logic Speed Upgrade\n? ELECTRONIC SIGNATURE FOR IDENTIFICATION;

Description\nThe GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much less power when compared to bipolar 22V10 devices. E2 technology offers high speed (<100ms) erase times, providing the ability to reprogram or reconfigure the device quickly and efficiently.

AT22V10B-10DC

HighSpeedUVErasableProgrammableLogicDevice

AT22V10B-10DI

HighSpeedUVErasableProgrammableLogicDevice

AT22V10B-10DM

HighSpeedUVErasableProgrammableLogicDevice

AT22V10B-10GC

HighSpeedUVErasableProgrammableLogicDevice

AT22V10B-10GI

HighSpeedUVErasableProgrammableLogicDevice

AT22V10B-10GM

HighSpeedUVErasableProgrammableLogicDevice

AT22V10B-10JC

HighSpeedUVErasableProgrammableLogicDevice

AT22V10B-10JI

HighSpeedUVErasableProgrammableLogicDevice

AT22V10B-10LM

HighSpeedUVErasableProgrammableLogicDevice