描述 Description

The Microchip Nanosecond Thyristor Switch combines the turn on speed of logic level transistors with high current switching capability inherent in SCRs. With this device engineers can now design circuits capable of switching pulse currents of 1A in less than 10ns or up to 30A in less that 20ns. The GA/GB200 series is specifically designed for use as switching elements in high speed, low-to-medium power radar pulse modulators. Other applications include switching elements for phased array radars. Laser pulse drivers, harmonic wave form generators, line drivers and high current replacements for avalanche transistors. For applications requiring higher voltage levels, Microchip has developed several “series string” circuits which allow the series connection of virtually and unlimited number of devices for voltages as high as 2000V with no significant decrease in speed. The circuits are described in Microchip’s design Note 14.

特性 Features

Rise time: 10ns.
Delay time: 10ns.
Recovery time: 0.5μs.
Pulse current: to 100A.
Turn on with 20ns, 10mA Gate Pulse.

簡介

GA301AE3屬于分立半導(dǎo)體產(chǎn)品的晶閘管-SCR。由制造生產(chǎn)的GA301AE3晶閘管 - SCR可控硅整流器 (SCR) 是三端子器件，其功能類似于整流二極管，并具有在施加控制信號前阻止正向電流流動的附加功能。SCR 最常用于控制交流市電，也稱為晶閘管，但后者有時也適用于其他相關(guān)器件。