描述 Description

The Microchip Nanosecond Thyristor Switch combines the turn on speed of logic level transistors with high current switching capability inherent in SCRs. With this device engineers can now design circuits capable of switching pulse currents of 1A in less than 10ns or up to 30A in less that 20ns. The GA/GB200 series is specifically designed for use as switching elements in high speed, low-to-medium power radar pulse modulators. Other applications include switching elements for phased array radars. Laser pulse drivers, harmonic wave form generators, line drivers and high current replacements for avalanche transistors. For applications requiring higher voltage levels, Microchip has developed several “series string” circuits which allow the series connection of virtually and unlimited number of devices for voltages as high as 2000V with no significant decrease in speed. The circuits are described in Microchip’s design Note 14.

特性 Features

Rise time: 10ns.
Delay time: 10ns.
Recovery time: 0.5μs.
Pulse current: to 100A.
Turn on with 20ns, 10mA Gate Pulse.