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HGTD7N60B3S

14A,600V,UFSSeriesN-ChannelIGBTs

TheHGTD7N60B3S,HGT1S7N60B3SandHGTP7N60B3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevo

Intersil

Intersil Corporation

HGTP7N60B3

14A,600V,UFSSeriesN-ChannelIGBTs

TheHGTD7N60B3S,HGT1S7N60B3SandHGTP7N60B3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevo

Intersil

Intersil Corporation

HGTP7N60B3D

14A,600V,UFSSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiode

TheHGTP7N60B3DandHGT1S7N60B3DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop

Intersil

Intersil Corporation

HGTP7N60B3D

14A,600V,UFSSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiode

TheHGTP7N60B3DandHGT1S7N60B3DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

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