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IRG4PC50KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRG4PC50KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?ShortCircuitRatedUltraFast:Optimizedforhigh operationfrequencies>5.0kHz,andShortCircuitRated to10μs@125°C,VGE=15V ?Generation4IGBTdesignprovidestighterparameter distributionandhigherefficiencythanGeneration3 ?IGBTco-packagedwithHEXFRE

IRG4PC50KPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRG4PC50KPBF

ShortCircuitRatedUltraFastIGBT

Features ?Highshortcircuitratingoptimizedformotorcontrol, tsc=10μs,@360VVCE(start),TJ=125°C,VGE=15V ?Combineslowconductionlosseswithhighswitchingspeed ?Latestgenerationdesignprovidestighterparameterdistribution andhigherefficiencythanpreviousgenerati

IRG4PC50S

INSULATEDGATEBIPOLARTANSISTOR(Vces=600V,Vce(on)typ.=1.28V,@Vge=15V,Ic=41A)

VCES=600V VCE(on)typ.=1.28V @VGE=15V,IC=41A Features ?Standard:Optimizedforminimumsaturationvoltageandlowoperatingfrequencies(

IRG4PC50S

FitRate/EquivalentDeviceHours

IRG4PC50SDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

StandarddSpeedCoPackIGBT

IRG4PC50S-P

INSULATEDGATEBIPOLARTRANSISTORStandardSpeedIGBT

?Generation4IGBTsofferhighestefficiencyavailable ?IGBTsoptimizedforspecifiedapplicationconditions ?Designedtobeadrop-inreplacementforequivalentindustry-standardGeneration3IRIGBTs Features ?Standard:Optimizedforminimumsaturationvoltageandlowoperatingfrequen

IRG4PC50SPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRG4PC50SPBF

INSULATEDGATEBIPOLARTRANSISTOR

VCES=600V VCE(on)typ.=1.28V @VGE=15V,IC=41A Features ?Standard:Optimizedforminimumsaturationvoltageandlowoperatingfrequencies(