G30N60C3D數(shù)據(jù)手冊(cè)Renesas中文資料規(guī)格書(shū)
| 廠商型號(hào) |
G30N60C3D |
| 功能描述 | 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes |
| 制造商 | Renesas Renesas Technology Corp |
| 中文名稱 | 瑞薩 瑞薩科技有限公司 |
| 數(shù)據(jù)手冊(cè) | |
| 更新時(shí)間 | 2025-8-17 23:01:00 |
| 人工找貨 | G30N60C3D價(jià)格和庫(kù)存，歡迎聯(lián)系客服免費(fèi)人工找貨 |
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描述 Description
The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49051. The diode used in anti-parallel with the IGBT is the development type TA49053. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential. Formerly Developmental Type TA49014.
特性 Features
? 63A, 600V at TC= 25°C
? Typical Fall Time. . . . . . . . . . . . . . . . 230ns at TJ= 150°C
? Short Circuit Rating
? Low Conduction Loss
? Hyperfast Anti-Parallel Diode?
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飛凌 |
24+ |
NA/ |
15638 |
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開(kāi)票 |
詢價(jià) | ||
FAIRCHILD/仙童 |
25+ |
TO247 |
2905 |
原裝正品,假一罰十! |
詢價(jià) | ||
HARRIS |
24+ |
TO-3P |
10000 |
詢價(jià) | |||
仙童 |
2025+ |
TO247 |
32560 |
原裝優(yōu)勢(shì)絕對(duì)有貨 |
詢價(jià) | ||
ON SEMI |
23+ |
N/A |
10 |
正規(guī)渠道,只有原裝! |
詢價(jià) | ||
N/A |
23+ |
80000 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | |||
IR |
23+ |
TO-247 |
7000 |
詢價(jià) | |||
INFINEON |
20+ |
TO-247 |
38900 |
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票 |
詢價(jià) | ||
23+ |
TO-3PE |
65480 |
詢價(jià) | ||||
FSC |
2020+ |
TO247 |
5000 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢價(jià) |
