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首頁(yè)>G30N60>規(guī)格書(shū)詳情

G30N60中文資料INTERSIL數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

G30N60
廠商型號(hào)

G30N60

功能描述

63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

文件大小

116.91 Kbytes

頁(yè)面數(shù)量

7 頁(yè)

生產(chǎn)廠商

INTERSIL

網(wǎng)址

網(wǎng)址

數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-8-11 23:39:00

人工找貨

G30N60價(jià)格和庫(kù)存,歡迎聯(lián)系客服免費(fèi)人工找貨

G30N60規(guī)格書(shū)詳情

The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49051. The diode used in anti-parallel with the IGBT is the development type TA49053. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential. Formerly Developmental Type TA49014.

特性 Features

? 63A, 600V at TC= 25°C

? Typical Fall Time. . . . . . . . . . . . . . . . 230ns at TJ= 150°C

? Short Circuit Rating

? Low Conduction Loss

? Hyperfast Anti-Parallel Diode

?

產(chǎn)品屬性

  • 型號(hào):

    G30N60

  • 制造商:

    FAIRCHILD

  • 制造商全稱:

    Fairchild Semiconductor

  • 功能描述:

    60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
INFINEON
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24+
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15638
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