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G20N60

Fast S-IGBT in NPT-technology;

Fast S-IGBT in NPT-technology? 75% lower Eoff compared to previous generation combined with\n?? low conduction losses\n? Short circuit withstand time – 10 μs\n? Designed for:\n?? - Motor controls\n?? - Inverter\n? NPT-Technology for 600V applications offers:\n?? - very tight parameter distribution\n?? - high ruggedness, temperature stable behaviour\n?? - parallel switching capability

G20N60

Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation

G20N60B3

40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

TheHGTG20N60B3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

G20N60B3D

40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

TheHGTG20N60B3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

G20N60B3D

40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode; ? 40A, 600V at TC = 25℃\n? Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150℃\n? Short Circuit Rated\n? Low Conduction Loss\n? Hyperfast Anti-Parallel Diode;

The HGTG20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25℃ and 150℃. The diode used in anti-parallel with the IGBT is the RHRP3060.

G20N60C3

45A, 600V, UFS Series N-Channel IGBT

ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonly moderately

G20N60HS

High Speed IGBT in NPT-technology

HighSpeedIGBTinNPT-technology ?30lowerEoffcomparedtopreviousgeneration ?Shortcircuitwithstandtime–10μs ?Designedforoperationabove30kHz ?NPT-Technologyfor600Vapplicationsoffers: ??-parallelswitchingcapability ??-moderateEoffincreasewithtemperature ??-

G20N60C3

45A, 600V, UFS Series N-Channel IGBT;