G20N120E2數(shù)據(jù)手冊Renesas中文資料規(guī)格書
G20N120E2規(guī)格書詳情
描述 Description
The HGTG20N120E2 is a MOS gated, high voltage switch ing device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC.
特性 Features
?34A, 1200V
?Latch Free Operation
?Typical Fall Time - 780ns
?High Input Impedance
?Low Conduction Loss?
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
VISHAY原裝 |
25+23+ |
TO-247 |
24543 |
絕對原裝正品全新進口深圳現(xiàn)貨 |
詢價 | ||
GOFORD |
2022+ |
TO-251252 |
30000 |
進口原裝現(xiàn)貨供應,原裝 假一罰十 |
詢價 | ||
HARRIS |
24+ |
TO-3P |
4 |
詢價 | |||
Vishay(威世) |
23+ |
NA |
20094 |
正納10年以上分銷經(jīng)驗原裝進口正品做服務做口碑有支持 |
詢價 | ||
VISHAY |
24+ |
N/A |
8000 |
全新原裝正品,現(xiàn)貨銷售 |
詢價 | ||
FAIRCHILD |
2025+ |
SOP-8 |
3720 |
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售 |
詢價 | ||
門市 |
25+ |
91 |
60 |
原裝正品,假一罰十! |
詢價 | ||
harris |
16+ |
原廠封裝 |
10000 |
全新原裝正品,代理優(yōu)勢渠道供應,歡迎來電咨詢 |
詢價 | ||
GOFORD |
2022+ |
TO-251252 |
50000 |
原廠代理 終端免費提供樣品 |
詢價 | ||
VISHAY |
24+ |
TO-247 |
65200 |
一級代理/放心采購 |
詢價 |
