G12N60C3D中文資料安森美半導體數(shù)據(jù)手冊PDF規(guī)格書
G12N60C3D規(guī)格書詳情
The HGTG12N60C3D is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a MOSFET
and the low on?state conduction loss of a bipolar transistor. The much
lower on?state voltage drop varies only moderately between 25°C and
150°C. The IGBT used is the development type TA49123. The diode
used in anti parallel with the IGBT is the development type TA49061.
This IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses are
essential
Formerly Developmental Type TA49117.
特性 Features
? 24 A, 600 V at TC = 25°C
? Typical Fall Time 210 ns at TJ = 150°C
? Short Circuit Rating
? Low Conduction Loss
? Hyperfast Anti?Parallel Diode
? This is a Pb?Free Device
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
GOFORD |
23+ |
DFN3X3-8L |
50000 |
原裝正品 支持實單 |
詢價 | ||
GOFORD |
24+ |
DFN3X3-8L |
9600 |
原裝現(xiàn)貨,優(yōu)勢供應,支持實單! |
詢價 | ||
FAIRCHILD |
18+ |
TO-247 |
85600 |
保證進口原裝可開17%增值稅發(fā)票 |
詢價 | ||
FAIRCHILD/仙童 |
22+ |
TO-220 |
25000 |
只做原裝進口現(xiàn)貨,專注配單 |
詢價 | ||
IR |
23+ |
TO220 |
10000 |
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
IR |
23+ |
TO220 |
8000 |
只做原裝現(xiàn)貨 |
詢價 | ||
IR |
23+ |
TO220 |
7000 |
詢價 | |||
GOFORD |
24+ |
con |
10 |
現(xiàn)貨常備產品原裝可到京北通宇商城查價格 |
詢價 | ||
GOFORD(谷峰) |
2447 |
TO-252 |
105000 |
2500個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨, |
詢價 | ||
FAIRCHILD/仙童 |
22+ |
TO-220 |
6000 |
十年配單,只做原裝 |
詢價 |
