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G10N03

型號：G10N03S；Package：SOP-8；N-Channel Enhancement Mode Power MOSFET

Description TheG10N03Susesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

G10N10A

型號：G10N10A；Package：TO-252；Power switching application

Description TheG10N10Ausesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application Powerswitchingapplication Hardswitchedandhighfrequencycircuits Uninterruptiblepowersupply

G10N10A

型號：G10N10AS；Package：SOP-8；DC/DC Primary Side Switch

Description TheG10N10ASusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. Application ●DC/DCPrimarySideSwitch ●Telecom/Server ●SynchronousRectification

G10N65

型號：G10N65F；Package：TO-220F；N-Channel Enhancement Mode Power MOSFET

Description ThisadvancedMOSFETfamilyhasoptimizedon-state resistance,andalsoprovidessuperiorswitching performanceandhigheravalancheenergystrength.This devicefamilyissuitableforhighefficiencyswitchmode powersupplies. Application lActivepowerfactorcorrection l

G10N80

型號：G10N80F；Package：TO-220F；N-Channel Enhancement Mode Power MOSFET

Description ThisadvancedMOSFETfamilyhasoptimizedon-state resistance,andalsoprovidessuperiorswitching performanceandhigheravalancheenergystrength.This devicefamilyissuitableforhighefficiencyswitchmode powersupplies. Application lLEDpowersupplies lCellPhoneC

G10P03

型號：G10P03；Package：DFN3X3-8L；P-Channel Enhancement Mode Power MOSFET

Description TheG10P03usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

G10T60

型號：IGP10N60T；Package：PG-TO-220-3；Low Loss IGBT : IGBT in TRENCHSTOP??and Fieldstop technology

Features: ?VerylowVCE(sat)1.5V(typ.) ?MaximumJunctionTemperature175°C ?Shortcircuitwithstandtime5?s ?Designedfor: -VariableSpeedDriveforwashingmachinesandairconditioners -inductioncooking -UninterruptedPowerSupply ?TRENCHSTOP?andFieldstoptechnologyfor60

G100MS7

型號：IGQ100N120S7；Package：PG-TO247-3-PLUS-NN3.7；Short circuit rugged 1200 V TRENCHSTOP? IGBT 7 technology

Features ?VCE=1200V ?IC=100A ?LowsaturationvoltageVCEsat=2.0VatTvj=175°C ?Shortcircuitruggedness8μs ?Widerangeofdv/dtcontrollability ?CompleteproductspectrumandPSpiceModels:http://www.infineon.com/igbt/ Potentialapplications ?Industrialpowersupplies

G10N60A

型號：SGB10N60A；Package：PG-TO-263-3-2；Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation

FastIGBTinNPT-technology ?75lowerEoffcomparedtopreviousgeneration combinedwithlowconductionlosses ?Shortcircuitwithstandtime–10μs ?Designedfor: -Motorcontrols -Inverter ?NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution -highrugg

G10M65DF2

型號：STGB10M65DF2；Package：D2PAK；Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in D2PAK package

Description ThisdeviceisanIGBTdevelopedusingan advancedproprietarytrenchgatefield-stop structure.ThedeviceispartoftheMseries IGBTs,whichrepresentanoptimalbalance betweeninvertersystemperformanceand efficiencywherelow-lossandshort-circuit functionalityareess