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MMBT5551

Marking：G1；Package：SOT-23；NPN General Purpose Transistor

FEATURES ●Epitaxialplanardieconstruction. ●ComplementaryPNPtypeavailable (MMBT5401). ●Alsoavailableinleadfreeversion. APPLICATIONS ●Idealformediumpoweramplificationandswitching.

MMBT5551

Marking：G1；Package：TO-236AB；NPN Silicon

NPNSilicon

MMBT5551

Marking：G1；Package：SOT-23；NPN General Purpose Transistor

FEATURES ●Epitaxialplanardieconstruction. ●ComplementaryPNPtypeavailable(MMBT5401). ●Alsoavailableinleadfreeversion. APPLICATIONS ●Idealformediumpoweramplificationandswitching.

MMBT5551

Marking：G1；Package：SOT-23；High Voltage Transistors

HighVoltageTransistors FEATURE ●Wedeclarethatthematerialofproduct compliancewithRoHSrequirements.

MMBT5551

Marking：G1；Package：SOT-23；NPN Transistors

Features ●HighVoltageTransistors ●Pb-FreePackagesareAvailable

MMBT5551

Marking：G1；Package：SOT-23；TRANSISTOR(NPN)

FEATURES ComplementarytoMMBT5401 Idealformediumpoweramplificationandswitching

MMBT5551-H

Marking：G1；Package：SOT-23；NPN Transistors

Features ●HighVoltageTransistors ●Pb-FreePackagesareAvailable

MMBT5551-L

Marking：G1；Package：SOT-23；NPN Transistors

Features ●HighVoltageTransistors ●Pb-FreePackagesareAvailable

MMSZ5226B

Marking：G1；Package：SOD-123；ZENER DIODES

PlanarDieConstruction 500mWPowerDissipation 2.4V-75VStandoffVoltage 5%NominalZenerVoltage DesignedforSurfaceMountApplication PlasticMaterial-ULRecognitionFlammability Classification94V-O ThisisaHalogenFreeDevice AllSMCpartsaretraceabletothewaferlot Addit

MMSZ5226B

Marking：G1；Package：SOD-123；SOD-123 Plastic-Encapsulate Zener Diodes

Features PlanarDieConstruction Ultra-SmallSurfaceMountPackage Generalpurpose,MediumCurrent 350mWPowerDissipationOnCeramicPBC IdeallySuitedforAutomatedAssemblyProcesses