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型號：1PS79SB30；Package：SC-79；40 V, 0.2 A Schottky barrier diode

1.Generaldescription PlanarSchottkybarrierdiodewithanintegratedguardringforstressprotection,encapsulatedina SOD523(SC-79)ultrasmallSurface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits ?Verylowforwardvoltage ?Verylowreversecurrent ?Guardringp

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型號：1PS79SB30-Q；Package：SC-79；40 V, 0.2 A Schottky barrier diode

1.Generaldescription PlanarSchottkybarrierdiodewithanintegratedguardringforstressprotection,encapsulatedina SOD523(SC-79)ultrasmallSurface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits ?Verylowforwardvoltage ?Verylowreversecurrent ?Guardringp

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型號：BFS20；Package：SOT23；NPN medium frequency transistor

FEATURES ?IC(max)=25mA ?VCEO(max)=20V ?Verylowfeedbackcapacitance(typ.350fF). APPLICATIONS ?IFandVHFthickandthin-filmcircuitapplications. DESCRIPTION NPNmediumfrequencytransistorinaSOT23plasticpackage.

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型號：BFS20；Package：SOT-23；EPITAXIAL PLANAR NPN TRANSISTOR (HIGH FREQUENCY, VHF BAND AMPLIFIER)

HIGHFREQUENCYAPPLICATION. VHFBANDAMPLIFIERAPPLICATION.

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型號：BFS20；Package：SOT-23；NPN SILICON PLANAR VHF TRANSISTOR

PARTMARKINGDETAIL-G1

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型號：BZD27C68P；Voltage Regulator Diodes

Features ◇Silliconplanarzenerdiodes. ◇Lowprofilesurface-mountpackage. ◇Zenerandsurgecurrentspecification ◇Lowleakagecurrent ◇Excellentstability ◇Hightemperaturesolderingguaranteed:265℃/10seconds,atterminals

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型號：BZD27C68P；Package：SOD-123FL；Voltage Regulator Diodes

Features ◇Silliconplanarzenerdiodes. ◇Lowprofilesurface-mountpackage. ◇Zenerandsurgecurrentspecification ◇Lowleakagecurrent ◇Excellentstability ◇Hightemperaturesolderingguaranteed:265℃/10seconds,atterminals

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型號：BZT52H-A4V7；Package：SOD123F；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanSOD123FsmallandflatleadSurface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits ?Totalpowerdissipation:≤830mW ?Threetoleranceseries:±1,±2andapproximately±5 ?Wideworkingvoltagerange:nominal2.

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型號：BZT52H-A4V7-Q；Package：SC-76；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanSOD123FsmallandflatleadSurface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits ?Totalpowerdissipation:≤830mW ?Threetoleranceseries:±1,±2andapproximately±5 ?Wideworkingvoltagerange:nominal2.

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型號：EMG1；Package：SOT-553；NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

Features 1)TwoDTC124EchipsinaEMTorUMTorSMTpackage.