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G080N10M

Marking：G080N10；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description TheG080N10Musesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

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G080N10T

Marking：G080N10；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description TheG080N10Tusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

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