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GE02N60

N-CHANNELENHANCEMENTMODEPOWERMOSFET

ETLE-Tech Electronics LTD

亞歷電子亞歷電子有限公司

GE02N60

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Description TheGE02N60providethedesignerwiththebestcombinationoffastswitching. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplications.ThedeviceissuitedforDC-DC,DC-ACconvertersfortelecom,industrialandconsumerenvironment. Features *Dynami

GTMGTM CORPORATION

勤益投資控股勤益投資控股股份有限公司

GM02N60D/U

MinisizeofDiscretesemiconductorelements

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

GM02N60DSLASHU

MinisizeofDiscretesemiconductorelements

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

H02N60

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H02N60E

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H02N60F

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H02N60I

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H02N60J

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H02N60S

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
IPS
2010
TO251
50000
只做全新原裝誠信經(jīng)營現(xiàn)貨長期供應(yīng)
 詢價(jià)
IPS
2015+
TO251
19898
專業(yè)代理原裝現(xiàn)貨,特價(jià)熱賣!
 詢價(jià)
國產(chǎn)替代
2012
TO251
50000
全新原裝進(jìn)口自己庫存優(yōu)勢
 詢價(jià)
IPS
2016+
TO-251
6528
房間原裝進(jìn)口現(xiàn)貨假一賠十
 詢價(jià)
IPS
1708+
TO-251
8500
只做原裝進(jìn)口,假一罰十
 詢價(jià)
IPS
2022+
TO-251
50000
原廠代理 終端免費(fèi)提供樣品
 詢價(jià)
IPS
12+
TO-251
886
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
IPS
23+
TO-251
61288
##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù)
 詢價(jià)
FT
23+
TO251
9800
正品原裝貨價(jià)格低
 詢價(jià)
IPS
2022+
TO-251
30000
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
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更多FTU02N60C供應(yīng)商 更新時(shí)間2025-7-27 9:17:00

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