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STW8N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=8.2A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

SVF8N80F

8A,800VN-CHANNELMOSFET

GENERALDESCRIPTION SVF8N80T/F/KisanN-channelenhancementmodepowerMOS fieldeffecttransistorwhichisproducedusingSilanproprietary F-CellTMstructureVDMOStechnology.Theimprovedplanarstripe cellandtheimprovedguardringterminalhavebeenespecially tailoredtominimizeon-

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF8N80F

8A,800VN-CHANNELMOSFET

GENERALDESCRIPTION SVF8N80T/F/KisanN-channelenhancementmodepowerMOS fieldeffecttransistorwhichisproducedusingSilanproprietary F-CellTMstructureVDMOStechnology.Theimprovedplanarstripe cellandtheimprovedguardringterminalhavebeenespecially tailoredtominimizeon-

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF8N80F

8A,800VN-CHANNELMOSFET

GENERALDESCRIPTION SVF8N80T/F/KisanN-channelenhancementmodepowerMOS fieldeffecttransistorwhichisproducedusingSilanproprietary F-CellTMstructureVDMOStechnology.Theimprovedplanarstripe cellandtheimprovedguardringterminalhavebeenespecially tailoredtominimizeon-

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF8N80K

8A,800VN-CHANNELMOSFET

GENERALDESCRIPTION SVF8N80T/F/KisanN-channelenhancementmodepowerMOS fieldeffecttransistorwhichisproducedusingSilanproprietary F-CellTMstructureVDMOStechnology.Theimprovedplanarstripe cellandtheimprovedguardringterminalhavebeenespecially tailoredtominimizeon-

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF8N80K

8A,800VN-CHANNELMOSFET

GENERALDESCRIPTION SVF8N80T/F/KisanN-channelenhancementmodepowerMOS fieldeffecttransistorwhichisproducedusingSilanproprietary F-CellTMstructureVDMOStechnology.Theimprovedplanarstripe cellandtheimprovedguardringterminalhavebeenespecially tailoredtominimizeon-

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF8N80T

8A,800VN-CHANNELMOSFET

GENERALDESCRIPTION SVF8N80T/F/KisanN-channelenhancementmodepowerMOS fieldeffecttransistorwhichisproducedusingSilanproprietary F-CellTMstructureVDMOStechnology.Theimprovedplanarstripe cellandtheimprovedguardringterminalhavebeenespecially tailoredtominimizeon-

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF8N80T

8A,800VN-CHANNELMOSFET

GENERALDESCRIPTION SVF8N80T/F/KisanN-channelenhancementmodepowerMOS fieldeffecttransistorwhichisproducedusingSilanproprietary F-CellTMstructureVDMOStechnology.Theimprovedplanarstripe cellandtheimprovedguardringterminalhavebeenespecially tailoredtominimizeon-

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF8N80T

8A,800VN-CHANNELMOSFET

GENERALDESCRIPTION SVF8N80T/F/KisanN-channelenhancementmodepowerMOS fieldeffecttransistorwhichisproducedusingSilanproprietary F-CellTMstructureVDMOStechnology.Theimprovedplanarstripe cellandtheimprovedguardringterminalhavebeenespecially tailoredtominimizeon-

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

TSM8N80

800VN-ChannelPowerMOSFET

GeneralDescription TheTSM8N80N-ChannelenhancementmodePowerMOSFETisproducedbyplanarstripeDMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergypulse

TSCTaiwan Semiconductor Company, Ltd

臺(tái)灣半導(dǎo)體臺(tái)灣半導(dǎo)體股份有限公司

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