描述 Description

The FT93C46/56/66?series are?1024/2048/4096?bits of serial Electrical Erasable and Programmable Read Only Memory, commonly known as EEPROM. They are organized as 64/128/256 ?words of 16 bits? each ?when the ORG pin is connected to VCC (or unconnected) and 128/256/512 words of 8 bits (1 byte) each when the ORG pin is tied to ground.? The devices are fabricated with proprietary advanced CMOS process for low power and low voltage applications.? These devices are available in standard 8-lead PDIP, 8-lead JEDEC SOIC and 8-lead TSSOP packages. Our extended VCC?range (1.8V to 5.5V) devices enables wide spectrum of applications.\r
The?FT93C46/56/66 is enabled through the Chip Select pin (CS), and accessed via a 3-wire serial interface consisting of Data Input (DI), Data Output (DO), and Shift Clock (SCL). Upon receiving a READ instruction at?DI, the address is decoded and the data is clocked out serially on the data output pin?DO. The WRITE cycle is completely self-timed and no separate ERASE cycle is required before WRITE. The WRITE cycle is only enabled when the part is in the ERASE/WRITE ENABLE state.?Once a device begins its self-timed program procedure, the data out pin (DO) can indicate the READY/BUSY status by rising chip select (CS).\r

特性 Features

q???????Standard?Voltage and?Low?Voltage?Operation:
··FT93C46/56/66: ????? VCC?= 2.5V to 5.5V
··FT93C46A/56A/66A: ??????? VCC?= 1.8V to 5.5V
·q???????User Selectable Internal Organization:
··FT93C46:???? 128 x 8 or ??64 x 16
··FT93C56:???? 256 x 8 or 128 x 16
··FT93C66:???? 512 x 8 or 256 x 16
·q???????2 MHz Clock Rate (5V) Compatibility.
·q???????Industry Standard 3-wire?Serial?Interface.
·q???????Self-Timed?ERASE/WRITE?Cycles?(5ms max?including auto-erase).
·q???????Automatic?ERAL?before?WRAL.
·q???????Sequential READ Function.
·q???????High?Reliability:??Typical 1?Million?Erase/Write Cycle?Endurance.
·q???????100?Years?Data?Retention.
·q???????Industrial?Temperature?Range?(-40o?C?to?85o?C).
·q???????Standard 8-pin PDIP/SOIC/TSSOP Pb-free?Packages.