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FSYE913A0R數(shù)據(jù)手冊Renesas中文資料規(guī)格書
| 廠商型號(hào) |
FSYE913A0R |
| 功能描述 | P-Channel Power MOSFETs |
| 制造商 | Renesas Renesas Technology Corp |
| 中文名稱 | 瑞薩 瑞薩科技有限公司 |
| 原廠標(biāo)識(shí) | Renesas |
| 數(shù)據(jù)手冊 | |
| 更新時(shí)間 | |
| 人工找貨 | FSYE913A0R價(jià)格和庫存，歡迎聯(lián)系客服免費(fèi)人工找貨 |
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描述 Description
The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed.
技術(shù)參數(shù)
- 型號(hào)：
FSYE913A0R
- 制造商：
INTERSIL
- 制造商全稱：
Intersil Corporation
- 功能描述：
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
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