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FSYE430D1

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopeda seriesofRadiationHardenedMOSFETsspecifically designedforcommercialandmilitaryspaceapplications. EnhancedPowerMOSFETimmunitytoSingleEventEffects (SEE),SingleEventGateRupture(SEGR)inparticular,is combinedwith

Intersil

Intersil Corporation

FSL430D1

2A,500V,2.50Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi

Intersil

Intersil Corporation

FSS430D1

3A,500V,2.70Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

詳細(xì)參數(shù)

  • 型號(hào)：

    FSYE430D1

  • 制造商：

    INTERSIL

  • 制造商全稱(chēng)：

    Intersil Corporation

  • 功能描述：

    Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

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