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FSYA9150R1中文資料INTERSIL數據手冊PDF規(guī)格書

FSYA9150R1
廠商型號

FSYA9150R1

功能描述

Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs

文件大小

56.17 Kbytes

頁面數量

8

生產廠商 Intersil Corporation
企業(yè)簡稱

INTERSIL

中文名稱

Intersil Corporation官網

原廠標識
INTERSIL
數據手冊

下載地址一下載地址二到原廠下載

更新時間

2025-8-4 15:11:00

人工找貨

FSYA9150R1價格和庫存,歡迎聯系客服免費人工找貨

FSYA9150R1規(guī)格書詳情

The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed.

特性 Features

? 24A, -100V, rDS(ON) = 0.140?

? Total Dose

??? - Meets Pre-RAD Specifications to 100K RAD (Si)

? Single Event

??? - Safe Operating Area Curve for Single Event Effects

??? - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80 of Rated Breakdown and VGS of 10V Off-Bias

? Dose Rate

??? - Typically Survives 3E9 RAD (Si)/s at 80 BVDSS

??? - Typically Survives 2E12 if Current Limited to IDM

? Photo Current

??? - 7.0nA Per-RAD(Si)/s Typically

? Neutron

??? - Maintain Pre-RAD Specifications for 3E13 Neutrons/cm2

??? - Usable to 3E14 Neutrons/cm2

產品屬性

  • 型號:

    FSYA9150R1

  • 制造商:

    INTERSIL

  • 制造商全稱:

    Intersil Corporation

  • 功能描述:

    Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs

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