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零件編號(hào)下載 訂購(gòu)功能描述/絲印制造商 上傳企業(yè)LOGO

FSPYC260F

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star

Intersil

Intersil Corporation

FSPYC260F3

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star

Intersil

Intersil Corporation

FSPYC260F4

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star

Intersil

Intersil Corporation

FSPYC260R

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star

Intersil

Intersil Corporation

FSYC260D

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi

Intersil

Intersil Corporation

FSYC260R

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi

Intersil

Intersil Corporation

FT260

FutureTechnologyDevicesInternationalLtd.

FTDIFuture Technology Devices International Ltd.

飛特帝亞英商飛特帝亞有限公司

FT260Q

HID-classUSBtoUART/I2CBridgeIC

FTDIFuture Technology Devices International Ltd.

飛特帝亞英商飛特帝亞有限公司

FT260Q-R

HID-classUSBtoUART/I2CBridgeIC

FTDIFuture Technology Devices International Ltd.

飛特帝亞英商飛特帝亞有限公司

FT260Q-x

HID-classUSBtoUART/I2CBridgeIC

FTDIFuture Technology Devices International Ltd.

飛特帝亞英商飛特帝亞有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    FSPYC260F

  • 制造商：

    INTERSIL

  • 制造商全稱(chēng)：

    Intersil Corporation

  • 功能描述：

    Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

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ISL
05+
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4300
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ISL
23+
65480
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FAIRCHILD
23+
NA
19960
只做進(jìn)口原裝,終端工廠(chǎng)免費(fèi)送樣
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FSC
2016+
DIP8
3500
只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票!
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FSC
24+
DIP8
5000
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FSC
1822+
DIP8
6852
只做原裝正品假一賠十為客戶(hù)做到零風(fēng)險(xiǎn)!!
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FAIRCHILD
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66800
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24+
DIP-8
6430
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FSC
24+
DIP8
65200
一級(jí)代理/放心采購(gòu)
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FAIRCHILD/仙童
23+
DIP8
50000
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更多FSPYC260F供應(yīng)商 更新時(shí)間2025-7-27 9:17:00

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