描述 Description

1200V? SmartPACK1 IGBT module with trench/fieldstop IGBT4, Emitter Controlled Diode4, NTC and PressFIT Contact Technology

特性 Features

·Low Switching Losses
·Low V CEsat
·Trench IGBT4
·V CEsat with positive Temperature Coefficient
·Al 2O 3 Substrate with Low Thermal Resistance
·Rugged Duplex frame construction
·Rugged selfacting PressFIT assembly

應(yīng)用 Application

?????FS50R12U1T4Data Sheet (2 MB, EN/CN)EN/DEEN/JAParametricFS50R12U1T4Configuration?SixpackIC(nom) / IF(nom) ?50.0A?VCE(sat)(Tvj=25°C typ)?1.85V?VF(Tvj=25°C typ)?1.7V?Housing?SmartPACK 1Dimensions(width)?44.0mm?Dimensions(length)?69.5mm?Data SheetTitleSizeDateVersionFS50R12U1T4 (chinese/english)EN/CNEN/DEEN/JA2 MB10 十一月 201403_00Product BrochureTitleSizeDateVersion1EDI EiceDRIVER? Compact 300 milEN216 KB09 五月 201601_00Application NotesTitleSizeDateVersionIndustrial IGBT Modules Explanation of Technical InformationENJA2.2 MB03 十二月 201501_02利用單極柵電壓驅(qū)動IGBTCNEN384 KB03 十一月 201501_00等效熱路模型CNEN500 KB25 十一月 2013Application of screen print templates to paste thermal grease within IGBT modulesEN489 KB10 二月 2014Series connection of IGBTsEN28 KB10 二月 2014電力電子模塊內(nèi)部NTC的使用CNEN586 KB26 十一月 2013如何正確計(jì)算并最大限度減小 IGBT 的死區(qū)時(shí)間CNEN1.5 MB26 八月 2013Aging stability of various heatconducting pastes for use with modules without baseplatesEN111 KB10 二月 2014Assembly Instructions Smart1 ModulesENDE1.5 MB22 十月 2009Application Note IGBT Definition of Junction TemperatureEN84 KB09 四月 2009Paralleling of IGBTsEN28 KB10 二月 2014Product BriefTitleSizeDateVersionSmartPIM and SmartPACK - Self-acting PressFIT assemblyEN168 KB27 四月 201606_00EditorialsTitleSizeDateVersionCorrelating NTC-Reading and Chip-Temperature in Power Electronic ModulesEN297 KB04 十一月 201501_00Self acting PressFIT moduleEN624 KB31 一月 2011The challenge of accurately analyzing thermal resistancesEN1.1 MB31 五月 20141200V IGBT4 -High Power- a new Technology Generation with Optimized Characteristics for High Current ModulesEN141 KB07 二月 2014Comparison between active and passive thermal cycling stress with respect to substrate solder reliability in IGBT modules with Cu baseplatesEN704 KB31 五月 2014Application BrochureTitleSizeDateVersionSolutions for Industrial DrivesEN3.4 MB15 五月 201710_00Solutions for Uninterruptible Power Supply (UPS) SystemsEN3.4 MB15 五月 201709_00Product Selection GuideTitleSizeDateVersionSelection Guide - Industrial and general purpose gate driver ICsEN3.5 MB15 五月 201701_00Product CatalogueTitleSizeDateVersionShort Form Catalog - May 2017EN2.9 MB12 五月 201703_00銷售產(chǎn)品名稱FS50R12U1T4OPNFS50R12U1T4BPSA1產(chǎn)品狀態(tài)not for new design在線訂購封裝名稱AG-SMART1-1無鉛產(chǎn)品no無鹵no通過無鉛認(rèn)證yes包裝規(guī)格30包裝類型TRAY評估板評估板系列描述狀態(tài)2ED300E17-SFOGate Driver, IGBT ModulesThis evaluation board for the 2ED300C17-S / -ST IGBT driver boards can be used for all medium and high power IGBT modules up to 1700V.·For equipping EiceDRIVER? 2ED300C17-S / -ST

簡介

FS50R12U1T4屬于分立半導(dǎo)體產(chǎn)品的晶體管-IGBT-模塊。由制造生產(chǎn)的FS50R12U1T4晶體管 - IGBT - 模塊絕緣柵雙極晶體管 (IGBT) 是三端功率半導(dǎo)體器件，主要用作電子開關(guān)，兼具高效率和快速切換優(yōu)點(diǎn)。作為模塊，IGBT 配置為非對稱式橋； 升壓、降壓和制動斬波器；全橋、三電平和三相逆變器。有些器件內(nèi)置了用于監(jiān)控溫度的 NTC 熱敏電阻。IGBT 模塊可根據(jù)最大功率、集電極電流、集射擊穿電壓和配置進(jìn)行區(qū)分。