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FRM234D

7A, 250V, 0.70 Ohm, Rad Hard, N-Channel Power MOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

FRM234D

7A, 250V, 0.70 Ohm, Rad Hard, N-Channel Power MOSFETs;

FRM234H

7A,250V,0.70Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

FRM234R

7A,250V,0.70Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

FRS234D

5A,250V,0.715Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

FRS234H

5A,250V,0.715Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

FRS234R

5A,250V,0.715Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

FSL234D

4A,250V,0.610Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

FSL234R

4A,250V,0.610Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

FSPYE234F

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star