首頁 >FQT5P10TF-VB>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
100VP-ChannelMOSFET GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbl. Features ?-3.6A,-100V,RDS(on)=1.05?@VGS=-10V ?Lowgatecharge(typical6.3nC) ?LowCrs | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
100VP-ChannelMOSFET | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實業(yè)有限公司 | KEXIN | ||
Excellentpackageforgoodheatdissipation. | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
100VP-ChannelEnhancementModeMOSFET | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT | ||
HighCurrentDensitySurface-MountSchottkyBarrierRectifiers FEATURES ?Verylowprofile-typicalheightof1.1mm ?Idealforautomatedplacement ?Guardringforovervoltageprotection ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiency ?Lowthermalresistance ?MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C ?AEC-Q101qu | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
HighCurrentDensitySurfaceMount | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
HighCurrentDensitySurfaceMountSchottkyBarrierRectifiers | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
HighCurrentDensitySurfaceMountSchottkyBarrierRectifiers | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay |
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