零件型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
FQD1N60C | 600V N-Channel MOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | |
FQD1N60C | N-Channel QFET? MOSFET 600 V, 1.0 A, 11.5 廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | |
FQD1N60C | N-Channel QFET? MOSFET 600 V, 1.0 A, 11.5 廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | |
FQD1N60C | 600V N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingCoriseSemiconductor?sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | |
FQD1N60C | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=1A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=11.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | |
FQD1N60C | 功率 MOSFET,N 溝道,QFET?,600 V,1 A,11.5 ?,DPAK; ?1A, 600V, RDS(on)= 11.5Ω(最大值)@VGS = 10 V, ID = 0.5A柵極電荷低(典型值:4.8nC)\n?低 Crss(典型值3.5pF)\n?100% 經(jīng)過雪崩擊穿測試\n?符合 RoHS 標準\n?RoHS compliant\n; 該 N 溝道增強型功率 MOSFET 產(chǎn)品采用飛兆半導體的專有平面條形和 DMOS 技術(shù)生產(chǎn)。這種先進的 MOSFET 技術(shù)已專門定制用來降低導通電阻,并提供卓越的開關(guān)性能和較高的雪崩能量強度。這些器件適用于開關(guān)電源、有源功率因數(shù)校正(PFC)及照明燈電子鎮(zhèn)流器。 | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | |
FQD1N60C | 600V N-Channel MOSFET | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | |
N-Channel QFET? MOSFET 600 V, 1.0 A, 11.5 廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
600V N-Channel MOSFET | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild |
技術(shù)參數(shù)
- Pb-free:
Pb
- Halide free:
H
- Status:
Active
- Channel Polarity:
N-Channel
- Configuration:
Single
- V(BR)DSS Min (V):
600
- VGS Max (V):
±30
- VGS(th) Max (V):
4
- ID Max (A):
1
- PD Max (W):
28
- RDS(on) Max @ VGS = 10 V(mΩ):
11500
- Qg Typ @ VGS = 10 V (nC):
4.8
- Ciss Typ (pF):
130
- Package Type:
DPAK-3/TO-252-3
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
25+ |
TO-252251 |
45000 |
FAIRCHILD/仙童全新現(xiàn)貨FQD1N60C即刻詢購立享優(yōu)惠#長期有排單訂 |
詢價 | ||
FAIRCHILD |
24+ |
TO-252 |
15300 |
絕對原裝現(xiàn)貨,價格低,歡迎詢購! |
詢價 | ||
ON/安森美 |
24+ |
TO-252 |
505348 |
免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系 |
詢價 | ||
FAIRCHILD |
24+ |
TO-252(DPAK) |
8866 |
詢價 | |||
仙童 |
06+ |
TO-252 |
8000 |
原裝庫存 |
詢價 | ||
FAIRCHILD |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
FSC |
25+23+ |
TO-252 |
38765 |
絕對原裝正品現(xiàn)貨,全新深圳原裝進口現(xiàn)貨 |
詢價 | ||
FAIRCHIL |
24+ |
TO-252 |
90000 |
一級代理商進口原裝現(xiàn)貨、價格合理 |
詢價 | ||
FAIRCHILDRCHILD |
2447 |
SOT252 |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
Fairchild(飛兆/仙童) |
23+ |
NA |
20094 |
正納10年以上分銷經(jīng)驗原裝進口正品做服務做口碑有支持 |
詢價 |
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