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IXFH7N80

HiPerFETPowerMOSFETs

HiPerFETPowerMOSFETs N-ChannelEnhancementMode Highdv/dt,Lowtrr,HDMOSTMFamily Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodrive

IXYS

IXYS Corporation

IXFH7N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=7A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFI7N80P

PolarHVHiPerFETPowerMOSFET

N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ●Internationalstandardpackages ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect Advantages ●Easytomount ●Spacesavings ●Highpowerdensity

IXYS

IXYS Corporation

IXFI7N80P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=7A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.44Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFM7N80

HiPerFETPowerMOSFETs

HiPerFETPowerMOSFETs N-ChannelEnhancementMode Highdv/dt,Lowtrr,HDMOSTMFamily Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodrive

IXYS

IXYS Corporation

IXFM7N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=7A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.4Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFP7N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=7A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.44Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andPFCCircuits..

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFP7N80P

PolarHVHiPerFETPowerMOSFET

N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ●Internationalstandardpackages ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect Advantages ●Easytomount ●Spacesavings ●Highpowerdensity

IXYS

IXYS Corporation

IXFP7N80P

PowerMOSFET

IXYS

IXYS Corporation

IXFP7N80P

PolarHiPerFETPowerMOSFET

N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features ●InternationalStandardPackages ●Dynamicdv/dtRating ●AvalancheRated ●FastIntrinsicRectifier ●LowQG Applications ●DC-DCConverters ●BatteryChargers ●Switch-ModeandResonant-ModePowerSupplies

IXYS

IXYS Corporation

詳細(xì)參數(shù)

  • 型號：

    FQB7N80

  • 制造商：

    FAIRCHILD

  • 制造商全稱：

    Fairchild Semiconductor

  • 功能描述：

    800V N-Channel MOSFET

供應(yīng)商型號品牌批號封裝庫存備注價格
FAIRCHILD
24+
TO-263
70750
詢價
FAIRCHILD
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費送樣
 詢價
24+
TO-263
6430
原裝現(xiàn)貨/歡迎來電咨詢
 詢價
FAIRCHILD
1709+
SOT-263
32500
普通
 詢價
FAIRCHILD
2023+環(huán)?，F(xiàn)貨
TO-263
20000
專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務(wù)
 詢價
FAIRCHILD/仙童
23+
3
6500
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
FAIRC
2023+
TO-263(D2PAK
50000
原裝現(xiàn)貨
 詢價
FAIRCHILD/仙童
23+
3
6500
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
FAIRCHILD/仙童
24+
TO-263
30000
只做正品原裝現(xiàn)貨
 詢價
harris
16+
原廠封裝
10000
全新原裝正品,代理優(yōu)勢渠道供應(yīng),歡迎來電咨詢
 詢價
更多FQB7N80供應(yīng)商 更新時間2025-7-17 16:30:00

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